Plasma processing apparatus
    1.
    发明授权

    公开(公告)号:US11676799B2

    公开(公告)日:2023-06-13

    申请号:US17198043

    申请日:2021-03-10

    Abstract: A plasma processing apparatus includes a chamber; a first electrode facing an inside of the chamber; a radio-frequency power supply configured to supply a radio-frequency power to the first electrode; a feeding rod configured to feed the radio-frequency power to a center of a surface of the first electrode opposite to a surface facing the inside of the chamber; a conductive plate provided in parallel to the surface of the first electrode opposite to the surface facing the inside of the chamber, the plate being grounded; and a dielectric plate connecting the first electrode and the conductive plate, and having a shape that is rotationally symmetric with respect to a center of the first electrode.

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