公开(公告)号：US20190318914A1

公开(公告)日：2019-10-17

申请号：US16378956

申请日：2019-04-09

Applicant: Tokyo Electron Limited

Inventor： Naohiko OKUNISHI ,  Hiroshi NAGAHATA ,  Masaru ISAGO ,  Hiraku MURAKAMI

IPC: H01J37/32

Abstract: A processing apparatus that processes an substrate inside a processing container includes a first electrode disposed inside the processing container, the first electrode being configured to mount the substrate, a second electrode disposed so as to face the first electrode, an electric power supply unit configured to apply high frequency power to the first electrode or the second electrode, a coil disposed on a surface opposite to the surface to which the first electrode or the second electrode faces and on a surface of any one of the first electrode and the second electrode, one end of the coil being connected to the any one of the the first electrode and the second electrode, another end of the coil being connected to ground, and an adjusting mechanism configured to control a magnetic field strength of a magnetic field that is from the coil and passes through the coil.

公开(公告)号：US20220068602A1

公开(公告)日：2022-03-03

申请号：US17445967

申请日：2021-08-26

Applicant: Tokyo Electron Limited

Inventor： Yuki KATAOKA ,  Hiroshi NAGAHATA

IPC: H01J37/32 ,  G01K13/00

Abstract: A temperature estimation apparatus includes an estimation unit configured to successively estimate temperature data by successively inputting given time series process data relating to conditions inside a processing space in which plasma processing is performed, into a time series model generated in advance that correlates data values, in each time period, of time series process data relating to conditions inside the processing space, with a data value, at a respective time point, of time series temperature data measured inside the processing space.

公开(公告)号：US20230009419A1

公开(公告)日：2023-01-12

申请号：US17373078

申请日：2021-07-12

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA ,  Toshihiro KITAO ,  Hiroshi NAGAHATA ,  Chungjong LEE

IPC: G05B19/418 ,  H05H1/46 ,  H01L21/66

Abstract: A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

公开(公告)号：US20220310369A1

公开(公告)日：2022-09-29

申请号：US17706465

申请日：2022-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Joji TAKAYOSHI ,  Hidehiko SATO ,  Hiroshi NAGAHATA ,  Yuri KIMURA

IPC: H01J37/32 ,  H01J37/20 ,  H01L21/66

Abstract: A substrate processing apparatus includes a process module that includes: a stage having a first surface on which a substrate is placed and a second surface, a process module including an edge ring placed on the second surface, a measurement unit measuring an etching rate of the substrate; and a controller. The controller transfers the substrate to different transfer positions on the first surface and etches the substrate for each transfer position, acquires etching rates at points on a concentric circle of the substrate in an end of the substrate, for each transfer position, from the measurement unit, generates an approximate curve of each of the concentric circles based on each of the acquired etching rates for each transfer position, calculates each linear expression representing a movement direction of the substrate, based on the approximate curve for each transport position, and calculates an intersection coordinate of the linear expressions.