公开(公告)号：US20230009419A1

公开(公告)日：2023-01-12

申请号：US17373078

申请日：2021-07-12

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA ,  Toshihiro KITAO ,  Hiroshi NAGAHATA ,  Chungjong LEE

IPC: G05B19/418 ,  H05H1/46 ,  H01L21/66

Abstract: A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

公开(公告)号：US20230352282A1

公开(公告)日：2023-11-02

申请号：US17730751

申请日：2022-04-27

Applicant: Tokyo Electron Limited

Inventor： Jun SHINAGAWA ,  Toshihiro KITAO ,  Chungjong LEE ,  Masaki KITSUNEZUKA ,  Alok RANJAN

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32963 ,  H01J37/32926 ,  H01J37/32972 ,  H01L21/31116 ,  H01J2237/334

Abstract: A method of operating a plasma tool includes executing a plasma process on a wafer. Data associated with the plasma process are measured using a plurality of sensors while the plasma process is executed on the wafer. The plasma process is terminated at an endpoint time. A post-process fault detection is executed by determining whether a post-process wafer state is within a target range. When the post-process wafer state is outside the target range so that a fault is detected, the fault is corrected using the data associated with the plasma process.

公开(公告)号：US20230317483A1

公开(公告)日：2023-10-05

申请号：US17710085

申请日：2022-03-31

Applicant: Tokyo Electron Limited

Inventor： Masaki KITSUNEZUKA ,  Chungjong LEE ,  Jun SHINAGAWA

IPC: H01L21/67 ,  G01R31/28 ,  H01J37/32 ,  G05B19/418

CPC classification number: H01L21/67276 ,  G01R31/2831 ,  H01J37/32963 ,  G05B2219/45031 ,  G05B19/41875 ,  G05B19/41865 ,  G05B2219/32368 ,  H01J37/32972

Abstract: Provided is a method for monitoring a plasma-related process in a plasma tool. The method includes measuring data associated with the plasma-related process using a plurality of sensors while executing the plasma-related process on a wafer. Respective data measured by each sensor of the plurality of sensors are input into a respective individual estimation method to output a respective individual wafer state of the wafer, which results in a plurality of individual wafer states. The respective individual estimation method is configured to estimate the respective individual wafer state using at least the respective data. The plurality of individual wafer states is input into an integrated estimation method to output an integrated wafer state of the wafer. The integrated estimation method is configured to estimate the integrated wafer state using at least the plurality of individual wafer states.

公开(公告)号：US20160307775A1

公开(公告)日：2016-10-20

申请号：US15098434

申请日：2016-04-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chungjong LEE ,  Takayuki KATSUNUMA ,  Masanobu HONDA

IPC: H01L21/311

CPC classification number: H01L21/31138 ,  H01L21/31144

Abstract: Disclosed is a method for etching an organic film. Plasma of a processing gas containing hydrogen gas and nitrogen gas is generated within a processing container of a plasma processing apparatus that accommodates a workpiece. A partial region of the organic film that is exposed from a hard mask is changed into a denatured region by the generation of the plasma of the processing gas. Subsequently, plasma of a rare gas is generated within the processing container. The denatured region is removed by the plasma of the rare gas, and a substance released from the denatured region is deposited on the surface of the hard mask. In this method, the generation of the plasma of the processing gas and the generation of the plasma of the rare gas are repeated alternately.

Abstract translation: 公开了一种蚀刻有机膜的方法。 在容纳工件的等离子体处理装置的处理容器内产生含有氢气和氮气的处理气体的等离子体。 通过产生处理气体的等离子体，将从硬掩模露出的有机膜的局部区域变成变性区域。 随后，在处理容器内产生稀有气体的等离子体。 通过稀有气体的等离子体去除变性区域，并且从变性区域释放的物质沉积在硬掩模的表面上。 在该方法中，交替地重复处理气体的等离子体的产生和稀有气体的等离子体的产生。