公开(公告)号：US20240248417A1

公开(公告)日：2024-07-25

申请号：US18412739

申请日：2024-01-15

Applicant: Tokyo Electron Limited

Inventor： Yoji SAKATA ,  Shingo KATSUKI ,  Ryohei FUJISE ,  Kenichirou MATSUYAMA ,  Shinsuke TAKAKI ,  Hiroyuki IWAKI ,  Hiroki TADATOMO ,  Tomoya ONITSUKA

IPC: G03F7/00

CPC classification number: G03F7/70866 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70808

Abstract: A substrate processing apparatus includes a first transfer path that is a transfer path for a substrate after MOR film formation and before exposure, and a second transfer path that is a transfer path for the substrate after exposure; and one or a plurality of nitrogen atmosphere placement stages provided on at least one of the first transfer path and the second transfer path and configured to place the substrate in an environment with a nitrogen concentration of an atmosphere set higher than that of air.