公开(公告)号：US20240038533A1

公开(公告)日：2024-02-01

申请号：US18022213

申请日：2021-08-10

Applicant: Tokyo Electron Limited

Inventor： Hiroki TADATOMO ,  Makoto MURAMATSU ,  Kenichi UEDA ,  Arnaud Alain Jean DAUENDORFFER ,  Tomoya ONITSUKA ,  Keisuke YOSHIDA

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0274 ,  H01L21/31144 ,  H01L21/68742 ,  H01L21/67098

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus which are effective in preventing pattern collapse of an uneven pattern. The substrate processing method according to an exemplary embodiment includes replacing a liquid in a recess of a substrate having an uneven pattern of a negative type resist including a metal formed on a surface of the substrate with a solid-state stiffener, and subjecting the substrate to a molecular weight reduction processing that reduces the number of intermolecular bonds contained in the solid-state stiffener while maintaining the solid-state stiffener in a solid state.

公开(公告)号：US20180164689A1

公开(公告)日：2018-06-14

申请号：US15823661

申请日：2017-11-28

Applicant: Tokyo Electron Limited

Inventor： Yohei SANO ,  Shinichiro KAWAKAMI ,  Masashi ENOMOTO ,  Takahiro SHIOZAWA ,  Keisuke YOSHIDA ,  Tomoya ONITSUKA

IPC: G03F7/38 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/67 ,  G03F7/004

CPC classification number: G03F7/38 ,  G03F7/0043 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/31058 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6719

Abstract: A thermal treatment apparatus that performs a thermal treatment on a metal-containing film formed on a substrate, includes: a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film, wherein at the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.

公开(公告)号：US20240347354A1

公开(公告)日：2024-10-17

申请号：US18632500

申请日：2024-04-11

Applicant: Tokyo Electron Limited

Inventor： Ryouichirou NAITOU ,  Shinichiro KAWAKAMI ,  Tomoya ONITSUKA ,  Soichiro OKADA ,  Satoru SHIMURA

IPC: H01L21/67 ,  G03F7/38 ,  H01L21/027

CPC classification number: H01L21/67109 ,  H01L21/0274 ,  H01L21/67017 ,  G03F7/38

Abstract: A heat-treating method of performing a heat treatment on a substrate on which a film of a metal-containing resist film is formed and which is subjected to an exposure treatment, includes an operation of heating the substrate for a predetermined period of time at a heating temperature at which a metal-containing sublimate is not generated from the film of the metal-containing resist, wherein during the operation of heating the substrate, a reactive fluid in which a concentration of at least one of a carbon dioxide or moisture is higher than a concentration in an atmosphere to promote a reaction within the film of the metal-containing resist, is supplied to a processing space around the substrate.

公开(公告)号：US20240027923A1

公开(公告)日：2024-01-25

申请号：US18353300

申请日：2023-07-17

Applicant: Tokyo Electron Limited

Inventor： Tomoya ONITSUKA ,  Shinichiro KAWAKAMI ,  Hisashi GENJIMA

IPC: G03F7/00

CPC classification number: G03F7/70866

Abstract: A substrate processing apparatus for processing a substrate including a metal-containing resist film, includes: a heat treatment part configured to perform a heat treatment on the substrate having the film subjected to an exposing process; a developing process part configured to perform a developing process on the film of the substrate subjected to the heat treatment; and a gas contact part configured to bring the film into contact with an inert gas during a period after the exposing process and before the developing process.

公开(公告)号：US20240248417A1

公开(公告)日：2024-07-25

申请号：US18412739

申请日：2024-01-15

Applicant: Tokyo Electron Limited

Inventor： Yoji SAKATA ,  Shingo KATSUKI ,  Ryohei FUJISE ,  Kenichirou MATSUYAMA ,  Shinsuke TAKAKI ,  Hiroyuki IWAKI ,  Hiroki TADATOMO ,  Tomoya ONITSUKA

IPC: G03F7/00

CPC classification number: G03F7/70866 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70808

Abstract: A substrate processing apparatus includes a first transfer path that is a transfer path for a substrate after MOR film formation and before exposure, and a second transfer path that is a transfer path for the substrate after exposure; and one or a plurality of nitrogen atmosphere placement stages provided on at least one of the first transfer path and the second transfer path and configured to place the substrate in an environment with a nitrogen concentration of an atmosphere set higher than that of air.

公开(公告)号：US20240120217A1

公开(公告)日：2024-04-11

申请号：US18473459

申请日：2023-09-25

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Kosuke YOSHIHARA ,  Satoru SHIMURA ,  Yuhei KUWAHARA ,  Tomoya ONITSUKA ,  Soichiro OKADA ,  Tetsunari FURUSHO

IPC: H01L21/67 ,  H01L21/027

CPC classification number: H01L21/67109 ,  H01L21/027

Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.

公开(公告)号：US20240355644A1

公开(公告)日：2024-10-24

申请号：US18640443

申请日：2024-04-19

Applicant: Tokyo Electron Limited

Inventor： Shinsuke TAKAKI ,  Hiroki TADATOMO ,  Yoji SAKATA ,  Tomoya ONITSUKA ,  Naoki SHIBATA

IPC: H01L21/67 ,  G03F7/00 ,  G03F7/004 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  H01L21/677

CPC classification number: H01L21/67017 ,  G03F7/0042 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70866 ,  G03F7/70933 ,  G03F7/70991 ,  H01L21/67225 ,  H01L21/67769 ,  H01L21/67778

Abstract: A substrate processing system provided with a plurality of apparatuses to perform a patterning on a plurality of the substrates, wherein a transfer container accommodating the plurality of substrates is transferred to the plurality of apparatuses in a sequential manner. The substrate processing system includes: a first apparatus of the plurality of apparatuses, which is configured to form a metal-containing resist film on each substrate; a second apparatus of the plurality of apparatuses, which is configured to perform a development on the metal-containing resist film after exposure; and an atmosphere regulator having an accommodation space where the substrates, on each of which the metal-containing resist film before being subjected to the development is formed, are accommodated and configured to regulate an atmosphere of the accommodation space so as to regulate a degree of progress of a reaction of the metal-containing resist film on each substrate.

公开(公告)号：US20230176484A1

公开(公告)日：2023-06-08

申请号：US17906644

申请日：2021-03-15

Applicant: Tokyo Electron Limited

Inventor： Shinichiro KAWAKAMI ,  Yohei SANO ,  Tomoya ONITSUKA

IPC: G03F7/38 ,  H01L21/027 ,  H01L21/687 ,  H01L21/67

CPC classification number: G03F7/38 ,  H01L21/027 ,  H01L21/68742 ,  H01L21/67103

Abstract: A heat treatment apparatus includes: a stage on which a substrate is placed and heated, the substrate including an exposed resist film formed on a surface of the substrate, and the exposed resist film exhibiting a change in solubility of an exposed portion or an unexposed portion in a liquid developer by reacting with water and being heated; a lifting mechanism configured to relatively raise and lower the substrate between a first position at which the substrate is placed on the stage and a second position which is spaced apart from the stage; and a gas supply configured to supply a first gas to the substrate located at the second position before moving to the first position, the first gas having a humidity higher than that of an atmosphere in which the stage is provided.