公开(公告)号：US20240249951A1

公开(公告)日：2024-07-25

申请号：US18418757

申请日：2024-01-22

Applicant: Tokyo Electron Limited

Inventor： Kosuke YOSHIHARA ,  Yuichi TERASHITA ,  Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Hiroki TADATOMO ,  Naoki SHIBATA

IPC: H01L21/308 ,  C23C16/04 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/3081 ,  C23C16/042 ,  C23C16/45517 ,  C23C16/46 ,  H01L21/02491 ,  H01L21/3247

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of a metal-containing resist formed thereon and has been subjected to an exposure treatment and a heat treatment after the exposure treatment, the developing including: exposing the substrate to an acid atmosphere being an atmosphere containing gas of a weak acid under a pressure of an atmospheric pressure or higher; and removing a product produced by a reaction between the metal-containing resist and the gas of the weak acid, by heating the substrate.

公开(公告)号：US20240310740A1

公开(公告)日：2024-09-19

申请号：US18599619

申请日：2024-03-08

Applicant: Tokyo Electron Limited

Inventor： Kenichirou MATSUYAMA ,  Hiroki TADATOMO ,  Yoji SAKATA ,  Shinsuke TAKAKI

IPC: G03F7/00 ,  B65G47/90 ,  G03F7/38 ,  H01L21/677

CPC classification number: G03F7/7075 ,  B65G47/90 ,  G03F7/38 ,  G03F7/70533 ,  G03F7/7085 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/67703

Abstract: A substrate transfer method of transferring a substrate on which a metal-containing resist film is formed from a first placement part to a second placement part, includes transferring, depending on an abnormality in a transfer path, the substrate to a standby chamber in which a second atmosphere different from a first atmosphere of the first placement part is formed, without transferring the substrate to the second placement part, and putting the substrate on standby in the second atmosphere.

公开(公告)号：US20240248417A1

公开(公告)日：2024-07-25

申请号：US18412739

申请日：2024-01-15

Applicant: Tokyo Electron Limited

Inventor： Yoji SAKATA ,  Shingo KATSUKI ,  Ryohei FUJISE ,  Kenichirou MATSUYAMA ,  Shinsuke TAKAKI ,  Hiroyuki IWAKI ,  Hiroki TADATOMO ,  Tomoya ONITSUKA

IPC: G03F7/00

CPC classification number: G03F7/70866 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70808

Abstract: A substrate processing apparatus includes a first transfer path that is a transfer path for a substrate after MOR film formation and before exposure, and a second transfer path that is a transfer path for the substrate after exposure; and one or a plurality of nitrogen atmosphere placement stages provided on at least one of the first transfer path and the second transfer path and configured to place the substrate in an environment with a nitrogen concentration of an atmosphere set higher than that of air.

公开(公告)号：US20240355644A1

公开(公告)日：2024-10-24

申请号：US18640443

申请日：2024-04-19

Applicant: Tokyo Electron Limited

Inventor： Shinsuke TAKAKI ,  Hiroki TADATOMO ,  Yoji SAKATA ,  Tomoya ONITSUKA ,  Naoki SHIBATA

IPC: H01L21/67 ,  G03F7/00 ,  G03F7/004 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  H01L21/677

CPC classification number: H01L21/67017 ,  G03F7/0042 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70866 ,  G03F7/70933 ,  G03F7/70991 ,  H01L21/67225 ,  H01L21/67769 ,  H01L21/67778

Abstract: A substrate processing system provided with a plurality of apparatuses to perform a patterning on a plurality of the substrates, wherein a transfer container accommodating the plurality of substrates is transferred to the plurality of apparatuses in a sequential manner. The substrate processing system includes: a first apparatus of the plurality of apparatuses, which is configured to form a metal-containing resist film on each substrate; a second apparatus of the plurality of apparatuses, which is configured to perform a development on the metal-containing resist film after exposure; and an atmosphere regulator having an accommodation space where the substrates, on each of which the metal-containing resist film before being subjected to the development is formed, are accommodated and configured to regulate an atmosphere of the accommodation space so as to regulate a degree of progress of a reaction of the metal-containing resist film on each substrate.

公开(公告)号：US20210005468A1

公开(公告)日：2021-01-07

申请号：US16904802

申请日：2020-06-18

Applicant: Tokyo Electron Limited

Inventor： Shinsuke TAKAKI ,  Yasuhiro KUGA ,  Yukinobu OTSUKA ,  Shinichi SAGARA

IPC: H01L21/67 ,  F27B17/00 ,  F27D3/00 ,  H01L21/683

Abstract: A heat treatment apparatus for heating, in a treatment container, a substrate on which a coating film is formed, the heat treatment apparatus includes: a mount provided in the treatment container and configured to mount the substrate thereon; a heating part configured to heat the substrate mounted on the mount; a suction pipe leading to a suction port formed in the mount, penetrating the mount, and extending directly downward; and a collection container provided on a suction path between the suction pipe and a suction mechanism, wherein the collection container is provided directly below the mount in plan view and connected to the suction pipe to collect a sublimate in the treatment container.

公开(公告)号：US20240249964A1

公开(公告)日：2024-07-25

申请号：US18417564

申请日：2024-01-19

Applicant: Tokyo Electron Limited

Inventor： Shinsuke TAKAKI ,  Seiji NAKASHIMA ,  Akihiro TERAMOTO ,  Ryo SHOBU

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/673

CPC classification number: H01L21/67736 ,  H01L21/67161 ,  H01L21/67225 ,  H01L21/67389 ,  H01L21/6773

Abstract: A substrate processing system that performs substrate processing includes: a first processing system having one of a wet processing apparatus and a dry processing apparatus; a second processing system having the other one of the wet processing apparatus and the dry processing apparatus, wherein the first processing system includes a common stage, which is common to the first processing system and the second processing system and is configured to place thereon a container accommodating substrates before being subjected to the substrate processing, wherein the substrate processing system further includes: a first transfer system configured to transfer the substrates between the first processing system and the second processing system; and a second transfer system connected to at least the second processing system, and configured to transfer the substrates between the first processing system and the second processing system, or between another stage and the second processing system.

公开(公告)号：US20240030049A1

公开(公告)日：2024-01-25

申请号：US18375958

申请日：2023-10-02

Applicant: Tokyo Electron Limited

Inventor： Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Yasuhiro KUGA ,  Koji USHIMARU ,  Ryohei FUJISE

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  F27B17/00 ,  G03F7/16 ,  F27D3/00 ,  H05B3/22 ,  H05B1/02 ,  F27D5/00

CPC classification number: H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  F27B17/0025 ,  G03F7/168 ,  F27D3/0084 ,  H05B3/22 ,  H05B1/0233 ,  F27D5/0037 ,  F27B17/0083

Abstract: A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.

公开(公告)号：US20210118707A1

公开(公告)日：2021-04-22

申请号：US17072457

申请日：2020-10-16

Applicant: Tokyo Electron Limited

Inventor： Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Yasuhiro KUGA ,  Koji USHIMARU ,  Ryohei FUJISE

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  F27B17/00 ,  F27D3/00 ,  H05B3/22 ,  H05B1/02 ,  F27D5/00 ,  G03F7/16

Abstract: A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.