公开(公告)号：US20240304439A1

公开(公告)日：2024-09-12

申请号：US18273116

申请日：2022-01-13

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Philippe GAUBERT ,  Hajime NAKABAYASHI ,  Chihiro TAMURA ,  Hisashi WARASHINA

IPC: H01L21/02 ,  C23C8/10 ,  H01L21/67 ,  H01L23/00

CPC classification number: H01L21/02244 ,  C23C8/10 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/67288 ,  H01L23/562

Abstract: A substrate processing method includes: forming a metal film, which changes in volume when the metal film is oxidized, on a rear surface of a substrate; forming an oxide film, through which oxygen permeates, on a front surface of the metal film; and applying stress to the substrate by oxidizing the metal film.

公开(公告)号：US20230086545A1

公开(公告)日：2023-03-23

申请号：US17932800

申请日：2022-09-16

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Chihiro TAMURA ,  Hisashi WARASHINA

IPC: H01L21/228 ,  H01L21/02 ,  C30B1/10 ,  C30B29/52 ,  C30B1/02

Abstract: A method of forming conductive member includes: forming, on substrate, first portion containing first element constituting the conductive member to be obtained and second element causing eutectic reaction with the first element, and second portion containing third element constituting intermetallic compound with the second element; crystallizing primary crystals of the first element by adjusting temperature of the substrate after bringing the first portion into liquid phase state; growing crystal grains of the first element by diffusing the second element from the first portion into the second portion to increase ratio of the first element in crystal state to the first and second elements in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature; and turning the first portion, after completing diffusion of the second element into the second portion, into the conductive member having crystal grains of the first element.