公开(公告)号：US20230326977A1

公开(公告)日：2023-10-12

申请号：US18024971

申请日：2021-09-01

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Chihiro TAMURA ,  Philippe GAUBERT

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/288

CPC classification number: H01L29/401 ,  H01L28/40 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/288 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02175 ,  H01L21/02337

Abstract: A manufacturing method for a semiconductor device includes forming a dielectric film on a semiconductor substrate or on a lower electrode that is formed on a semiconductor substrate, attaching a metal to a predetermined area on a surface of the dielectric film selectively, forming a metal oxide film with an insulation property in the predetermined area on the surface of the dielectric film by applying heat treatment to the metal, and forming an upper electrode on the dielectric film in a state where the metal oxide film is formed in the predetermined area on the surface of the dielectric film.

公开(公告)号：US20240304439A1

公开(公告)日：2024-09-12

申请号：US18273116

申请日：2022-01-13

Applicant: Tokyo Electron Limited

Inventor： Koji AKIYAMA ,  Philippe GAUBERT ,  Hajime NAKABAYASHI ,  Chihiro TAMURA ,  Hisashi WARASHINA

IPC: H01L21/02 ,  C23C8/10 ,  H01L21/67 ,  H01L23/00

CPC classification number: H01L21/02244 ,  C23C8/10 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/67288 ,  H01L23/562

Abstract: A substrate processing method includes: forming a metal film, which changes in volume when the metal film is oxidized, on a rear surface of a substrate; forming an oxide film, through which oxygen permeates, on a front surface of the metal film; and applying stress to the substrate by oxidizing the metal film.

公开(公告)号：US20210399085A1

公开(公告)日：2021-12-23

申请号：US17279830

申请日：2019-09-19

Applicant: Tokyo Electron Limited

Inventor： Yumiko KAWANO ,  Genji NAKAMURA ,  Philippe GAUBERT ,  Hajime NAKABAYASHI

IPC: H01L49/02

Abstract: A method of manufacturing a semiconductor device includes a first laminating step, a second laminating step, a third laminating step, a first annealing step, and a fourth laminating step. In the first laminating step, a first electrode film is laminated on a substrate. In the second laminating step, a capacitive insulator is laminated on the first electrode film. In the third laminating step, a metal oxide is laminated on the capacitive insulator. In the first annealing step, the first electrode film, the capacitive insulator, and the metal oxide, which are laminated on the substrate, are annealed. In the fourth laminating step, a second electrode film is laminated on the annealed metal oxide. The capacitive insulator is an oxide that contains at least one of zirconium and hafnium, and the metal oxide is an oxide that contains at least one of tungsten, molybdenum, and vanadium.