公开(公告)号：US20230251567A1

公开(公告)日：2023-08-10

申请号：US18121700

申请日：2023-03-15

Applicant: Tokyo Electron Limited

Inventor： Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Taiki MIURA ,  Jaeyoung PARK ,  Yusuke FUKUNAGA

IPC: G03F1/80 ,  H01J37/32 ,  G03F7/075

CPC classification number: G03F1/80 ,  G03F7/075 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32798 ,  H01J2237/334

Abstract: An etching method comprises (a) providing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film; and (b) etching the silicon-containing film, including (b-1) etching the silicon-containing film using plasma generated from a first process gas, the first process gas containing a hydrogen fluoride gas and a reaction control gas to control a reaction between hydrogen fluoride and the silicon-containing film, the first process gas containing, as the reaction control gas, at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction, and (b-2) etching the silicon-containing film using plasma generated from a second process gas, the second process gas containing a hydrogen fluoride gas, and containing at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction.