公开(公告)号：US20220068657A1

公开(公告)日：2022-03-03

申请号：US17445961

申请日：2021-08-26

Applicant: Tokyo Electron Limited

Inventor： Koji TAKEYA ,  Gen YOU ,  Jeongchan LEE ,  Satoshi TODA ,  Keiko HADA

IPC: H01L21/311 ,  H01L21/67

Abstract: An etching method of an oxygen-containing silicon film embedded in each recess of a substrate, which includes a plurality of recesses having different opening sizes, by supplying an etching gas to the substrate, the etching method including: adsorbing an organic amine compound gas on the oxygen-containing silicon film by supplying the organic amine compound gas to the substrate; desorbing an excess of the organic amine compound gas from the substrate; and selectively etching the oxygen-containing silicon film with respect to each recess by supplying the etching gas containing a halogen to the substrate on which the organic amine compound has been adsorbed.