公开(公告)号：US20170032990A1

公开(公告)日：2017-02-02

申请号：US15219096

申请日：2016-07-25

Applicant: Tokyo Electron Limited ,  CENTRAL GLASS CO., LTD.

Inventor： Jun LIN ,  Koji TAKEYA ,  Mitsuhiro TACHIBANA ,  Akifumi YAO ,  Kunihiro YAMAUCHI ,  Tatsuo MIYAZAKI

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  C23F1/12 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136 ,  H01L23/53209 ,  H01L2924/01027 ,  H05K3/02 ,  H05K2203/0315

Abstract: An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing β-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.

Abstract translation: 蚀刻方法包括通过向目标物体供给含有β-二酮的蚀刻气体和氧化钴膜的氧化气体来蚀刻在目标物体的表面上形成的钴膜的工序。 执行蚀刻气体和氧化气体的供给，使得氧化气体与蚀刻气体的流量比在0.5％至50％的范围内，同时将目标物体加热到低于或等于250°的温度 C。

公开(公告)号：US20190181056A1

公开(公告)日：2019-06-13

申请号：US16213240

申请日：2018-12-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Koji TAKEYA ,  Keiji TANOUCHI

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/67

Abstract: There is provided a method of etching a silicon-containing film formed on a substrate, comprising: supplying an etching gas including a fluorine-containing gas having a smaller molecular weight than ClF3 to the silicon-containing film; and controlling etching amounts at a central portion and an outer peripheral portion of the silicon-containing film by controlling a flow velocity of the etching gas.

公开(公告)号：US20180211844A1

公开(公告)日：2018-07-26

申请号：US15744401

申请日：2016-06-07

Applicant: TOKYO ELECTRON LIMITED ,  CENTRAL GLASS CO., LTD.

Inventor： Jun LIN ,  Koji TAKEYA ,  Shinichi KAWAGUCHI ,  Mitsuhiro TACHIBANA ,  Akifumi YAO ,  Kunihiro YAMAUCHI

IPC: H01L21/302 ,  H01L21/02

CPC classification number: H01L21/302 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/0237 ,  H01L21/67103 ,  H01L21/68742

Abstract: A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is β-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

公开(公告)号：US20160225637A1

公开(公告)日：2016-08-04

申请号：US15013257

申请日：2016-02-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Masashi MATSUMOTO ,  Ayano HAGIWARA ,  Koji TAKEYA ,  Junichiro MATSUNAGA

IPC: H01L21/306

CPC classification number: H01L21/32135 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069

Abstract: An etching method includes: disposing a target substrate including a silicon and a silicon-germanium within a chamber; and performing both of selectively etching the silicon-germanium with respect to the silicon and selectively etching the silicon with respect to the silicon-germanium by varying ratios of F2 gas and NH3 gas in an etching gas that has a gas system including the F2 gas and the NH3 gas.

Abstract translation: 蚀刻方法包括：在室内设置包括硅和硅 - 锗的靶基板; 并且相对于硅选择性地蚀刻硅锗，并且通过在具有包括F2气体的气体系统的蚀刻气体中改变F2气体和NH 3气体的比率来相对于硅 - 锗选择性蚀刻硅， NH3气体。

公开(公告)号：US20220068657A1

公开(公告)日：2022-03-03

申请号：US17445961

申请日：2021-08-26

Applicant: Tokyo Electron Limited

Inventor： Koji TAKEYA ,  Gen YOU ,  Jeongchan LEE ,  Satoshi TODA ,  Keiko HADA

IPC: H01L21/311 ,  H01L21/67

Abstract: An etching method of an oxygen-containing silicon film embedded in each recess of a substrate, which includes a plurality of recesses having different opening sizes, by supplying an etching gas to the substrate, the etching method including: adsorbing an organic amine compound gas on the oxygen-containing silicon film by supplying the organic amine compound gas to the substrate; desorbing an excess of the organic amine compound gas from the substrate; and selectively etching the oxygen-containing silicon film with respect to each recess by supplying the etching gas containing a halogen to the substrate on which the organic amine compound has been adsorbed.

公开(公告)号：US20180197748A1

公开(公告)日：2018-07-12

申请号：US15867453

申请日：2018-01-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuaki NISHIMURA ,  Jun LIN ,  Koji TAKEYA

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/677

Abstract: In a substrate processing method for performing predetermined processing on a substrate, which has a processing target film, accommodated in a processing chamber, as a luminous intensity of a predetermined wavelength in an emission spectrum of a plasma generated from a processing gas in the chamber, a luminous intensity of the predetermined wavelength which starts to change when actual processing of the processing target film is started is measured. Then, a processing time of the predetermined processing performed after a moment when the measured luminous intensity of the predetermined wavelength is changed, is set.

公开(公告)号：US20170309478A1

公开(公告)日：2017-10-26

申请号：US15517497

申请日：2015-09-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji TAKEYA ,  Kazuaki NISHIMURA ,  Nobuhiro TAKAHASHI ,  Junichiro MATSUNAGA

IPC: H01L21/02 ,  C23C16/455 ,  G05B19/04

CPC classification number: H01L21/02381 ,  C23C16/45557 ,  G05B19/04 ,  G05B2219/45212 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/165

Abstract: An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas which comprises H2 gas and Ar gas in an excited state; and selectively etching the silicon with respect to the silicon-germanium by the processing gas which is in the excited state. Due to this configuration, silicon can be etched, with high selectivity, with respect to the silicon-germanium.