公开(公告)号：US20190341255A1

公开(公告)日：2019-11-07

申请号：US16516344

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO

IPC: H01L21/033 ,  H01L21/67 ,  H01J37/32 ,  G03F7/00 ,  H01L29/66 ,  D06M14/18 ,  H01L21/02 ,  H01L29/51 ,  H01L21/31 ,  H01L21/027 ,  G03F7/40 ,  G03D5/00 ,  C08J7/18

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

公开(公告)号：US20230014819A1

公开(公告)日：2023-01-19

申请号：US17756979

申请日：2020-10-28

Applicant: Tokyo Electron Limited

Inventor： Satoshi TODA ,  Naoki SHINDO ,  Mitsuhiro TACHIBANA ,  Haruna SUZUKI ,  Gen YOU

IPC: H01L21/3213 ,  H01L21/67

Abstract: An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.

公开(公告)号：US20220384178A1

公开(公告)日：2022-12-01

申请号：US17664932

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Naoki SHINDO ,  Gen YOU ,  Haruna SUZUKI

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/687 ,  H01L21/67

Abstract: An etching method includes preparing a substrate in which titanium nitride and molybdenum or tungsten are present, and etching the titanium nitride by supplying a processing gas including a ClF3 gas and a N2 gas to the substrate, wherein in the etching the titanium nitride, a partial pressure ratio of the ClF3 gas to the N2 gas in the processing gas is set to a value at which grain boundaries of the molybdenum or the tungsten are nitrided to such an extent that generation of a pitting is suppressed.

公开(公告)号：US20170133235A1

公开(公告)日：2017-05-11

申请号：US15129000

申请日：2015-04-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Gen YOU ,  Takanori NISHI

IPC: H01L21/308 ,  H01L21/027 ,  G03F7/09 ,  G03F7/40 ,  G03F7/20 ,  G03F7/38 ,  G03F7/30 ,  H01L21/306 ,  G03F7/16

CPC classification number: H01L21/3086 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/30604 ,  Y10S977/887 ,  Y10S977/943

Abstract: A substrate treatment method includes: forming a plurality of circular patterns of a resist film on a substrate; thereafter applying a first block copolymer; then phase-separating the first block copolymer into a hydrophilic polymer and a hydrophobic polymer; thereafter selectively removing the hydrophilic polymer; then selectively removing the resist film from a top of the substrate; thereafter applying a second block copolymer to the substrate; then phase-separating the second block copolymer into a hydrophilic polymer and a hydrophobic polymer; and thereafter selectively removing the hydrophilic polymer from the phase-separated second block copolymer. A ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

公开(公告)号：US20230178378A1

公开(公告)日：2023-06-08

申请号：US18098112

申请日：2023-01-18

Applicant: Tokyo Electron Limited

Inventor： Noriaki OKABE ,  Naoki SHINDO ,  Gen YOU ,  Takuya SEINO

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/31144 ,  H01L21/67069

Abstract: An etching method includes a preparing step and a removing step. In the preparing step, a substrate is prepared which includes a first film, a second film stacked on the first film, and a hard mask stacked on the second film, such that the second film is etched with the hard mask having a formed pattern as a mask until the first film is exposed. In the removing step, the hard mask is removed using a fluorine-containing gas. Further, the removing step is executed for a time longer than a first time from a start of a supply of the fluorine-containing gas to a start of an etching of the hard mask, and shorter than a second time from the start of the supply of the fluorine-containing gas to a start of an etching of the first film.

公开(公告)号：US20220068657A1

公开(公告)日：2022-03-03

申请号：US17445961

申请日：2021-08-26

Applicant: Tokyo Electron Limited

Inventor： Koji TAKEYA ,  Gen YOU ,  Jeongchan LEE ,  Satoshi TODA ,  Keiko HADA

IPC: H01L21/311 ,  H01L21/67

Abstract: An etching method of an oxygen-containing silicon film embedded in each recess of a substrate, which includes a plurality of recesses having different opening sizes, by supplying an etching gas to the substrate, the etching method including: adsorbing an organic amine compound gas on the oxygen-containing silicon film by supplying the organic amine compound gas to the substrate; desorbing an excess of the organic amine compound gas from the substrate; and selectively etching the oxygen-containing silicon film with respect to each recess by supplying the etching gas containing a halogen to the substrate on which the organic amine compound has been adsorbed.

公开(公告)号：US20170320107A1

公开(公告)日：2017-11-09

申请号：US15491058

申请日：2017-04-19

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: B08B3/10 ,  H01L21/67

CPC classification number: B08B3/10 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

公开(公告)号：US20140020721A1

公开(公告)日：2014-01-23

申请号：US13941836

申请日：2013-07-15

Applicant: Tokyo Electron Limited ,  Kabushiki Kaisha Toshiba

Inventor： Hidekazu HAYASHI ,  Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: H01L21/02

CPC classification number: H01L21/02101 ,  B08B7/0021 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67109

Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state.

Abstract translation: 一种基材处理方法和装置，用于在将基材输送到处理容器中时防止基材的防干燥含氟有机溶剂的蒸发，并且可以防止处理容器中的含氟有机溶剂的分解。 其表面被第一含氟有机溶剂覆盖的基材被携带到处理容器中。 通过形成第一含氟有机溶剂和第二含氟有机溶剂的混合物的高压流体气氛，第一含氟有机溶剂的沸点低于第一氟 在处理容器中，例如， 通过将第二含氟有机溶剂的高压流体供给到处理容器中。 此后，将处于高压流体或气体状态的流体从处理容器排出，从而获得处于干燥状态的基板。

公开(公告)号：US20220020601A1

公开(公告)日：2022-01-20

申请号：US17305552

申请日：2021-07-09

Applicant: Tokyo Electron Limited

Inventor： Satoshi TODA ,  Naoki SHINDO ,  Haruna SUZUKI ,  Gen YOU

IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/768

Abstract: An etching method includes: providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film; performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoF6 gas and a WF6 gas into the chamber; when a pore present inside the first film is exposed by the first etching, filling the pore with one of molybdenum and tungsten by stopping the first etching and supplying a reduction gas and a second gas selected the MoF6 gas and the WF6 gas into the chamber; and performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a third gas selected from the MoF6 gas and the WF6 gas into the chamber.

公开(公告)号：US20180065843A1

公开(公告)日：2018-03-08

申请号：US15554026

申请日：2016-02-10

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO ,  Takanori NISHI

IPC: B81C1/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/67

CPC classification number: B81C1/00031 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C08F297/00 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/67178 ,  H01L21/67742

Abstract: A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.