公开(公告)号：US20210090895A1

公开(公告)日：2021-03-25

申请号：US17110683

申请日：2020-12-03

Applicant: Tokyo Electron Limited

Inventor： Jong Won Yun

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/66

Abstract: A substrate processing apparatus includes: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

公开(公告)号：US20160111296A1

公开(公告)日：2016-04-21

申请号：US14883738

申请日：2015-10-15

Applicant: Tokyo Electron Limited

Inventor： Jong Won Yun

IPC: H01L21/311 ,  H01L21/3105 ,  H01L21/66

CPC classification number: H01L21/31111 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/6708 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20

Abstract: A substrate processing apparatus comprises: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

Abstract translation: 基板处理装置包括：基板保持单元，被配置为保持和旋转基板; 蚀刻单元，被配置为通过将处理液体排放到由所述基板保持单元旋转的所述基板上来蚀刻基板的表面; 以及控制单元，被配置为通过蚀刻单元来控制蚀刻量。 在基板处理装置中，控制单元基于关于通过后处理装置在基板上进行的表面处理的特性的信息的信息来控制基板的表面上的各位置的蚀刻量，该后处理装置被配置为执行 在基板处理装置进行基板处理之后的后处理。

公开(公告)号：US11784057B2

公开(公告)日：2023-10-10

申请号：US17110683

申请日：2020-12-03

Applicant: Tokyo Electron Limited

Inventor： Jong Won Yun

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L21/31111 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/6708 ,  H01L21/67253 ,  H01L22/20 ,  H01L22/12

Abstract: A substrate processing apparatus includes: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

公开(公告)号：US11282719B2

公开(公告)日：2022-03-22

申请号：US16371286

申请日：2019-04-01

Applicant: Tokyo Electron Limited

Inventor： Go Ayabe ,  Kouji Takuma ,  Ryo Manabe ,  Jong Won Yun

IPC: H01L21/67 ,  B08B3/04 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing apparatus 10 includes processing units 16 each configured to process a wafer W; tanks 102 and 202 each configured to store a processing liquid; processing liquid supply units 103 and 203 each configured to supply the processing liquid into the processing unit 16; drain units 110 and 210 each configured to drain the processing liquid; supplement units 112 and 212 each configured to supplement the tanks 102 and 202 with the processing liquids; and a control unit 18. The control unit 18 is configured to perform a process job by controlling the processing liquid supply units 103 and 203 and the processing unit 16 and perform, when predetermined liquid exchange conditions are met during the performing of the process job, a liquid exchange processing in parallel with the process job by controlling the drain units 110 and 210 and the supplement units 112 and 212.

公开(公告)号：US20190304811A1

公开(公告)日：2019-10-03

申请号：US16371286

申请日：2019-04-01

Applicant: Tokyo Electron Limited

Inventor： Go Ayabe ,  Kouji Takuma ,  Ryo Manabe ,  Jong Won Yun

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/04

Abstract: A substrate processing apparatus 10 includes processing units 16 each configured to process a wafer W; tanks 102 and 202 each configured to store a processing liquid; processing liquid supply units 103 and 203 each configured to supply the processing liquid into the processing unit 16; drain units 110 and 210 each configured to drain the processing liquid; supplement units 112 and 212 each configured to supplement the tanks 102 and 202 with the processing liquids; and a control unit 18. The control unit 18 is configured to perform a process job by controlling the processing liquid supply units 103 and 203 and the processing unit 16 and perform, when predetermined liquid exchange conditions are met during the performing of the process job, a liquid exchange processing in parallel with the process job by controlling the drain units 110 and 210 and the supplement units 112 and 212.