公开(公告)号：US20240203694A1

公开(公告)日：2024-06-20

申请号：US18067917

申请日：2022-12-19

Applicant: Tokyo Electron Limited

Inventor： Takuji SAKO ,  Kyohei NOGUCHI ,  Masaki HOSONO ,  Masahiro YAMAMOTO ,  Julen AROZAMENA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J37/32357 ,  H01J37/32816 ,  H01J2237/1825 ,  H01J2237/334

Abstract: An etching method of etching silicon formed on a side surface of a recess that exists in a substrate includes: forming an oxide film on a surface of the silicon by performing a radical oxidation processing on the substrate; performing a chemical processing with a gas on the oxide film; and removing a reaction product produced by the chemical processing, wherein the forming the oxide film includes: a first phase of performing a radical processing with a plasma of an oxygen-containing gas; and a second phase of performing a radical processing with a plasma of the oxygen-containing gas and an etching gas, and wherein the forming the oxide film, the performing the chemical processing, and the removing the reaction product are repeated multiple times.