公开(公告)号：US20240203694A1

公开(公告)日：2024-06-20

申请号：US18067917

申请日：2022-12-19

Applicant: Tokyo Electron Limited

Inventor： Takuji SAKO ,  Kyohei NOGUCHI ,  Masaki HOSONO ,  Masahiro YAMAMOTO ,  Julen AROZAMENA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J37/32357 ,  H01J37/32816 ,  H01J2237/1825 ,  H01J2237/334

Abstract: An etching method of etching silicon formed on a side surface of a recess that exists in a substrate includes: forming an oxide film on a surface of the silicon by performing a radical oxidation processing on the substrate; performing a chemical processing with a gas on the oxide film; and removing a reaction product produced by the chemical processing, wherein the forming the oxide film includes: a first phase of performing a radical processing with a plasma of an oxygen-containing gas; and a second phase of performing a radical processing with a plasma of the oxygen-containing gas and an etching gas, and wherein the forming the oxide film, the performing the chemical processing, and the removing the reaction product are repeated multiple times.

公开(公告)号：US20180286695A1

公开(公告)日：2018-10-04

申请号：US15935679

申请日：2018-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuji SAKO

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/02164

Abstract: A method of etching a silicon oxide film on a substrate, includes generating reaction products containing moisture by modifying the silicon oxide film by supplying a mixed gas containing a gas containing a halogen element and a basic gas onto the surface of the silicon oxide film and making chemical reaction of the silicon oxide film with the mixed gas, generating different reaction products by modifying the silicon oxide film by supplying the gas containing a halogen element onto an interface between the silicon oxide film and the reaction products and making a chemical reaction on the silicon oxide film with the gas containing a halogen element by using the moisture contained in the reaction products, and heating and removing the reaction products and the different reaction products.