公开(公告)号：US20250087470A1

公开(公告)日：2025-03-13

申请号：US18957942

申请日：2024-11-25

Applicant: Tokyo Electron Limited

Inventor： Takari YAMAMOTO ,  Kazuhito YAMADA ,  Masanori TAKAHASHI ,  Shinya ISHIKAWA ,  Shota EZAKI

IPC: H01J37/32

Abstract: A substrate processing apparatus includes: a chamber having a processing space; a base arranged inside the processing space and having an internal space; an electrostatic chuck arranged on the base and including a dielectric member having a support surface, at least one heater electrode layer arranged inside the dielectric member and formed of a first material, and at least one resistive layer arranged inside the dielectric member and formed of a second material, wherein a resistance temperature coefficient of the second material is equal to or greater than that of the first material; a control circuit arranged inside the internal space and configured to control power to be applied to the at least one heater electrode layer; and a detection circuit arranged inside the internal space and configured to detect a voltage applied to the at least one resistive layer.

公开(公告)号：US20240030009A1

公开(公告)日：2024-01-25

申请号：US18224070

申请日：2023-07-20

Applicant: Tokyo Electron Limited

Inventor： Kazuhito YAMADA

IPC: H01J37/32 ,  H05B1/02 ,  H05B6/54 ,  H05B6/62

CPC classification number: H01J37/32724 ,  H01J37/32568 ,  H01J37/32541 ,  H05B1/0233 ,  H05B6/54 ,  H05B6/62 ,  H01J2237/2007 ,  H01J2237/24585

Abstract: A base disposed in a plasma processing chamber. An electrostatic chuck disposed on an upper portion of the base, the electrostatic chuck including a first part and a second part. A first heater electrode layer group including at least one heater electrode layer disposed in the first part. A second heater electrode layer group including at least one heater electrode layer disposed in the second part. A power source is electrically connected to the first heater electrode layer group and the second heater electrode layer group. A controller configured to periodically and sequentially supply DC current from the power source to heater electrode layers included in the first heater electrode layer group and heater electrode layers included in the second heater electrode layer group.

公开(公告)号：US20220415628A1

公开(公告)日：2022-12-29

申请号：US17848760

申请日：2022-06-24

Applicant: Tokyo Electron Limited

Inventor： Shota EZAKI ,  Masanori TAKAHASHI ,  Kazuhito YAMADA

IPC: H01J37/32

Abstract: A plasma processing method includes: setting a temperature of a substrate support surface to a first temperature; supplying electric power from an electric power adjuster to a heater; before plasma is generated, when the temperature of the substrate support surface measured by a temperature sensor stabilizes at the first temperature, measuring first electric power supplied to the heater; after the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, measuring second electric power supplied to the heater; calculating an input heat quantity input from the plasma based on the first electric power and the second electric power; and correcting the first temperature to a second temperature based on the input heat quantity and a thermal resistance between the substrate support and the temperature sensor or between a substrate and the temperature sensor.

公开(公告)号：US20210265143A1

公开(公告)日：2021-08-26

申请号：US17178458

申请日：2021-02-18

Applicant: Tokyo Electron Limited

Inventor： Hiroki ENDO ,  Kazuhito YAMADA ,  Masanori TAKAHASHI

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: A substrate processing apparatus for processing a substrate using plasma includes a chamber in which the substrate is accommodated, and a stage arranged inside the chamber and configured to mount the substrate thereon. The stage includes: a base formed by a conductor and configured to allow RF (Radio Frequency) power to flow through the conductor; a substrate holding part provided on the base and configured to hold the substrate; a plurality of heaters provided in the substrate holding part; a heater control part provided inside the base and configured to control electric power to be supplied to each of the plurality of heaters; and an RF filter provided outside the base and connected to a wiring for supplying the electric power to each of the plurality of heaters. The RF filter is provided in common for the plurality of heaters.

公开(公告)号：US20220148860A1

公开(公告)日：2022-05-12

申请号：US17586551

申请日：2022-01-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhito YAMADA ,  Hiraki ENDO ,  Takashi SATO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber; a substrate support having a lower electrode, an electrostatic chuck, and a heater; a radio frequency power supply; a DC power supply; a first controller; and a second controller. The first controller controls the radio frequency power supply to supply a pulsed radio frequency power to the lower electrode periodically with a cycle defined by a first frequency, and controls the DC power supply to apply a pulsed negative voltage to the edge ring periodically with the cycle. The second controller includes a heater controller that controls the power by obtaining a resistance value of the heater from sample values of a current and a voltage supplied to the heater. The first frequency is different from a second frequency that is a sampling frequency of the sample value of the current and the sample value of the voltage in the second controller.