SUBSTRATE SUPPORT
    1.
    发明申请

    公开(公告)号:US20250022724A1

    公开(公告)日:2025-01-16

    申请号:US18897344

    申请日:2024-09-26

    Abstract: A substrate support for use in a substrate processing apparatus includes: a base having an internal space; an electronic circuit board disposed in the internal space; a substrate supporting plate disposed on the base; and at least one temperature adjusting element disposed in the internal space, the at least one temperature adjusting element being configured to adjust a temperature of the electronic circuit board.

    SUBSTRATE PROCESSING APPARATUS AND STAGE

    公开(公告)号:US20210265143A1

    公开(公告)日:2021-08-26

    申请号:US17178458

    申请日:2021-02-18

    Abstract: A substrate processing apparatus for processing a substrate using plasma includes a chamber in which the substrate is accommodated, and a stage arranged inside the chamber and configured to mount the substrate thereon. The stage includes: a base formed by a conductor and configured to allow RF (Radio Frequency) power to flow through the conductor; a substrate holding part provided on the base and configured to hold the substrate; a plurality of heaters provided in the substrate holding part; a heater control part provided inside the base and configured to control electric power to be supplied to each of the plurality of heaters; and an RF filter provided outside the base and connected to a wiring for supplying the electric power to each of the plurality of heaters. The RF filter is provided in common for the plurality of heaters.

    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20220415628A1

    公开(公告)日:2022-12-29

    申请号:US17848760

    申请日:2022-06-24

    Abstract: A plasma processing method includes: setting a temperature of a substrate support surface to a first temperature; supplying electric power from an electric power adjuster to a heater; before plasma is generated, when the temperature of the substrate support surface measured by a temperature sensor stabilizes at the first temperature, measuring first electric power supplied to the heater; after the plasma is generated, when the temperature of the substrate support surface measured by the temperature sensor stabilizes at the first temperature, measuring second electric power supplied to the heater; calculating an input heat quantity input from the plasma based on the first electric power and the second electric power; and correcting the first temperature to a second temperature based on the input heat quantity and a thermal resistance between the substrate support and the temperature sensor or between a substrate and the temperature sensor.

    SUBSTRATE SUPPORT
    5.
    发明申请

    公开(公告)号:US20210313202A1

    公开(公告)日:2021-10-07

    申请号:US17204666

    申请日:2021-03-17

    Abstract: A substrate support for use in a substrate processing apparatus includes: a base having an internal space; an electronic circuit board disposed in the internal space; a substrate supporting plate disposed on the base; and at least one temperature adjusting element disposed in the internal space, the at least one temperature adjusting element being configured to adjust a temperature of the electronic circuit board.

    PLASMA PROCESSING APPARATUS
    7.
    发明申请

    公开(公告)号:US20190051501A1

    公开(公告)日:2019-02-14

    申请号:US16057548

    申请日:2018-08-07

    Abstract: Disclosed is a plasma processing apparatus including: a first member including a recessed portion in a range corresponding to a placing surface on a back surface side with respect to the placing surface on which a plasma processing target workpiece is placed; a sheet member formed in a sheet shape, including a heater and a lead wiring that supplies power to the heater, and disposed in the recessed portion such that the heater is positioned in a region corresponding to a placing surface inside the recessed portion and the lead wiring is positioned on a side surface of the recessed portion, and a second member fitted into the recessed portion in which the sheet member is disposed.

    SUBSTRATE PROCESSING APPARATUS
    9.
    发明申请

    公开(公告)号:US20250087470A1

    公开(公告)日:2025-03-13

    申请号:US18957942

    申请日:2024-11-25

    Abstract: A substrate processing apparatus includes: a chamber having a processing space; a base arranged inside the processing space and having an internal space; an electrostatic chuck arranged on the base and including a dielectric member having a support surface, at least one heater electrode layer arranged inside the dielectric member and formed of a first material, and at least one resistive layer arranged inside the dielectric member and formed of a second material, wherein a resistance temperature coefficient of the second material is equal to or greater than that of the first material; a control circuit arranged inside the internal space and configured to control power to be applied to the at least one heater electrode layer; and a detection circuit arranged inside the internal space and configured to detect a voltage applied to the at least one resistive layer.

    STAGE AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20210057237A1

    公开(公告)日:2021-02-25

    申请号:US16998264

    申请日:2020-08-20

    Abstract: A stage includes a base having an accommodation space therein, a dielectric layer provided on a first surface of the base and having a placement surface on which a substrate is placed, the dielectric layer including therein a plurality of heaters, and a heater control board disposed in the accommodation space and configured to drive the plurality of heaters. The base has an inlet in a second surface thereof that is opposite the first surface, the inlet being configured to introduce a coolant into the accommodation space.

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