公开(公告)号：US20240321571A1

公开(公告)日：2024-09-26

申请号：US18609278

申请日：2024-03-19

Applicant: Tokyo Electron Limited

Inventor： Daisuke OBA ,  Masafumi ISHIDA ,  Nobuo MATSUKI ,  Yoshinori MORISADA

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32449 ,  H01J37/32816 ,  H01J2237/3321 ,  H01J2237/3382 ,  H01L21/0234

Abstract: A method of forming an insulating film on a substrate having a recess, includes preparing the substrate inside a chamber of a processing apparatus, forming a flowable oligomer film on the substrate by supplying a processing gas containing a raw material gas and a diluent gas into the chamber and generating a flowable oligomer by plasma polymerization, controlling an interior of the chamber to have a pressure equal to or lower than a vapor pressure of the flowable oligomer to partially vaporize and remove the flowable oligomer film, and forming the insulating film in the recess by supplying energy to the substrate to cure the flowable oligomer.