公开(公告)号：US20230215754A1

公开(公告)日：2023-07-06

申请号：US17996524

申请日：2021-04-14

Applicant: Tokyo Electron Limited

Inventor： Satoru KAWAKAMI ,  Nobuo MATSUKI

IPC: H01L21/677 ,  H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/455 ,  C23C16/54 ,  C23C16/458

CPC classification number: H01L21/67754 ,  H01J37/32733 ,  H01L21/67161 ,  H01L21/6719 ,  C23C16/50 ,  C23C16/45565 ,  C23C16/54 ,  C23C16/4583 ,  H01J2237/201 ,  H01J2237/20235 ,  H01J2237/20214 ,  H01J2237/3321 ,  H01L21/68707

Abstract: A substrate processing apparatus includes: a vacuum transfer chamber including a substrate transfer mechanism provided in a vacuum transfer space thereof to collectively hold and transfer substrates with a substrate holder; and a processing chamber having processing spaces and connected to the vacuum transfer chamber. The processing chamber includes a loading/unloading port provided on a side of the vacuum transfer chamber to allow the vacuum transfer space and the processing spaces to communicate with each other. The processing spaces include a first processing space in which a first process is performed on the substrate and a second processing space in which a second process is performed on the substrate subjected to the first process. The first and second processing spaces are arranged in a direction in which the substrate is loaded and unloaded, and the substrate holder has a length that extends over the first and second processing spaces.

公开(公告)号：US20240321571A1

公开(公告)日：2024-09-26

申请号：US18609278

申请日：2024-03-19

Applicant: Tokyo Electron Limited

Inventor： Daisuke OBA ,  Masafumi ISHIDA ,  Nobuo MATSUKI ,  Yoshinori MORISADA

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32449 ,  H01J37/32816 ,  H01J2237/3321 ,  H01J2237/3382 ,  H01L21/0234

Abstract: A method of forming an insulating film on a substrate having a recess, includes preparing the substrate inside a chamber of a processing apparatus, forming a flowable oligomer film on the substrate by supplying a processing gas containing a raw material gas and a diluent gas into the chamber and generating a flowable oligomer by plasma polymerization, controlling an interior of the chamber to have a pressure equal to or lower than a vapor pressure of the flowable oligomer to partially vaporize and remove the flowable oligomer film, and forming the insulating film in the recess by supplying energy to the substrate to cure the flowable oligomer.

公开(公告)号：US20230295797A1

公开(公告)日：2023-09-21

申请号：US18042833

申请日：2021-08-12

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI ,  Yoshinori MORISADA ,  Takayuki KOMIYA ,  Satoru KAWAKAMI ,  Taro IKEDA ,  Toshihiko IWAO

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/509 ,  C23C16/52

CPC classification number: C23C16/345 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/509 ,  C23C16/52

Abstract: A film forming method forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, wherein the film forming method includes: (a) a step of supplying a raw material gas and a reaction gas as a processing gas to the processing container; and (b) a step of generating plasma of the processing gas using a radio-frequency power of 100 MHz or higher.

公开(公告)号：US20240087883A1

公开(公告)日：2024-03-14

申请号：US18271898

申请日：2022-01-11

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI ,  Yoshinori MORISADA ,  Daisuke OBA

IPC: H01L21/02

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  H01L21/02274

Abstract: A method for forming a silicon-containing film in a recess formed on a surface of a substrate, the method includes: (a) forming a flowable film in the recess by exposing the substrate, which is adjusted to a first temperature, to plasma generated from a processing gas including a halogen-containing silane: and (b) curing the flowable film by thermally processing the substrate at a second temperature higher than the first temperature.

公开(公告)号：US20240014013A1

公开(公告)日：2024-01-11

申请号：US18217885

申请日：2023-07-03

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI ,  Hiroyuki MATSUURA ,  Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/201 ,  H01J2237/332 ,  H01L21/32051

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

公开(公告)号：US20240014005A1

公开(公告)日：2024-01-11

申请号：US18217896

申请日：2023-07-03

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki MATSUURA ,  Nobuo MATSUKI ,  Taro IKEDA

IPC: H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32541 ,  H01J37/3417

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied with RF power, and an external electrode provided outside the partition wall.

公开(公告)号：US20220235456A1

公开(公告)日：2022-07-28

申请号：US17626523

申请日：2020-05-12

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI

IPC: C23C16/32 ,  C23C16/458

Abstract: A method of forming an insulation film on a substrate, includes: reacting, as a film-forming gas, an oxygen-containing silicon compound gas represented by formula below with a non-oxidizing hydrogen-containing gas in a state in which at least the non-oxidizing hydrogen-containing gas is plasmarized, to form a film of a flowable silanol compound on the substrate; and subsequently, annealing the substrate to turn the flowable silanol compound into the insulation film. SiαOβ(O—CmHn)ΓCxHy (where m, n, and a are arbitrary integers of 1 or more, β, Γ, x, and y are arbitrary integers of 0 or more, and β and Γ are not 0 at a same time).