公开(公告)号：US20220262601A1

公开(公告)日：2022-08-18

申请号：US17672217

申请日：2022-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiichi WATANABE ,  Manabu SATO ,  Masayuki SAWATAISHI ,  Hiroki YAMADA ,  Shinji ORIMO

IPC: H01J37/32

Abstract: An etching method includes (a) disposing a substrate having a silicon oxide film on a substrate support in a chamber. The substrate includes a plurality of etching stop layers arranged inside the silicon oxide film. The plurality of etching stop layers are arranged at different positions in a thickness direction of the silicon oxide film. Each of the plurality of etching stop layers is formed of at least one of tungsten and molybdenum. The etching method (b) supplying a processing gas into the chamber, the processing gas including a gas containing at least one of tungsten and molybdenum, a gas containing carbon and fluoride, and an oxygen-containing gas; and (c) generating plasma from the processing gas to etch the silicon oxide film, thereby forming a plurality of recesses that reach the plurality of etching stop layers, respectively, in the silicon oxide film.

公开(公告)号：US20140299571A1

公开(公告)日：2014-10-09

申请号：US14242273

申请日：2014-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masayuki SAWATAISHI

IPC: C23F1/12

CPC classification number: C23F1/12 ,  C23F4/00 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/32136

Abstract: Disclosed are a plasma processing method and a plasma processing apparatus which collectively perform etching under the same etching conditions while suppressing a shape abnormality. The multilayer film material has a polysilicon layer, a first metal layer formed on the polysilicon layer, and a hard mask layer which contains a tungsten layer formed on the first metal layer. In the method, plasma is generated by a mixed gas of a chloride-containing gas which contains a compound containing chlorine and silicon, a compound containing chlorine and boron, or a compound containing chlorine and hydrogen, a chlorine-containing gas which contains chlorine, and a processing gas which contains carbon and fluorine, and the hard mask layer is used as an etching mask so as to perform the etching from a top surface of the first metal layer to a bottom surface of the polysilicon layer.

Abstract translation: 公开了一种在抑制形状异常的同时在相同的蚀刻条件下进行蚀刻的等离子体处理方法和等离子体处理装置。 多层膜材料具有多晶硅层，在多晶硅层上形成的第一金属层和在第一金属层上形成有钨层的硬掩模层。 在该方法中，通过含有氯和硅的化合物的氯化物气体，含氯和硼的化合物，含氯和氢的化合物，含氯的含氯气体， 以及包含碳和氟的处理气体，并且将硬掩模层用作蚀刻掩模，以便从第一金属层的顶表面到多晶硅层的底表面进行蚀刻。

公开(公告)号：US20210005519A1

公开(公告)日：2021-01-07

申请号：US16918359

申请日：2020-07-01

Applicant: Tokyo Electron Limited

Inventor： Gaku SHIMODA ,  Masayuki SAWATAISHI ,  Takanori ETO

IPC: H01L21/66 ,  H01L21/3065 ,  H01J37/305 ,  H01J37/32 ,  H01L21/67

Abstract: A method of etching a substrate, on which a multilayered film is formed, is provided. The multilayered film includes a silicon-containing insulating layer, an undercoat layer provided under the silicon-containing insulating layer, and a mask layer provided above the silicon-containing insulating layer. When the substrate is loaded into a process chamber, a process gas containing a fluorocarbon gas and a noble gas is supplied into the process chamber, and the multilayered film is etched by the plasma formed from the process gas. The noble gas contains a first gas having higher ionization energy than Ar gas, and momentum of an ionized particle of the first gas is less than momentum of an ionized particle of Ar gas.

公开(公告)号：US20210005427A1

公开(公告)日：2021-01-07

申请号：US16977856

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Masayuki SAWATAISHI ,  Jun HIROSE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/311

Abstract: A plasma etching method according to an exemplary embodiment comprises arranging a substrate on an electrostatic chuck in a region surrounded by a focus ring. The substrate, in a state of being held by the electrostatic chuck, is etched by means of ions from a plasma. The electrostatic chuck includes a plurality of electrodes including a first electrode and a second electrode. The first electrode extends under a central region of the substrate. The second electrode extends under an edge region of the substrate. A plurality of voltages are respectively applied to the plurality of electrodes, wherein the plurality of voltages are determined such that, in the state in which the substrate is held by the electrostatic chuck, the ions from the plasma are incident on both the central region and the edge region substantially vertically.