公开(公告)号：US20240068921A1

公开(公告)日：2024-02-29

申请号：US18505066

申请日：2023-11-08

Applicant: Tokyo Electron Limited

Inventor： Satoru TERUUCHI ,  Jun HIROSE ,  Kazuya NAGASEKI ,  Shinji HIMORI

IPC: G01N15/02

CPC classification number: G01N15/0227 ,  G01N15/0211 ,  G01N2015/1087

Abstract: A particle monitoring system includes a light emitting device for irradiating an inside of a plasma processing apparatus with light, and a monitoring device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a base substrate, a plurality of imaging devices, and a control device. The base substrate has a plate shape. The plurality of imaging devices have optical axes facing upward on the base substrate, and are disposed apart from each other to capture images including scattered light from the particle irradiated with the light. The control device discriminates the particle in the images captured by the plurality of imaging devices.

公开(公告)号：US20190198298A1

公开(公告)日：2019-06-27

申请号：US16225326

申请日：2018-12-19

Applicant: Tokyo Electron Limited

Inventor： Jun HIROSE ,  Takehiro UEDA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32697 ,  H01L21/3065 ,  H01L21/67248 ,  H01L21/6831

Abstract: There is provision of a plasma etching apparatus including a processing vessel capable of being evacuated, a lower electrode provided in the processing vessel that is configured to place a substrate, an upper electrode provided in the processing vessel arranged in parallel with the lower electrode so as to face each other, a process gas supply unit configured to supply process gas to a processing space between the upper electrode and the lower electrode, a high frequency power supply unit configured to supply high frequency electric power for generating plasma from process gas, a focus ring surrounding a periphery of the substrate, a direct current (DC) power source configured to output DC voltage applied to the focus ring, a heating unit configured to heat the focus ring, and a temperature measurement unit for measuring temperature of the focus ring.

公开(公告)号：US20230020793A1

公开(公告)日：2023-01-19

申请号：US17956110

申请日：2022-09-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei UCHIDA ,  Jun HIROSE

IPC: H01L21/687 ,  H01L21/683 ,  H01J37/32

Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

公开(公告)号：US20180233328A1

公开(公告)日：2018-08-16

申请号：US15897228

申请日：2018-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro UEDA ,  Jun HIROSE

IPC: H01J37/32

CPC classification number: H01J37/3288 ,  H01J37/32642 ,  H01J37/32807 ,  H01J2237/334

Abstract: A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

公开(公告)号：US20170261258A1

公开(公告)日：2017-09-14

申请号：US15450876

申请日：2017-03-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun HIROSE ,  Norihiko AMIKURA ,  Risako MIYOSHI

IPC: F26B3/04

CPC classification number: F26B3/04 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449

Abstract: A method includes a step of increasing or decreasing a flow rate of a gas of the a second gas supply system, by a predetermined time from a start of a gas treatment step of the process recipe or a by a predetermined time before a start of the gas treatment step, by using apparatus information regarding a first gas supply system of the first substrate treatment apparatus and the second gas supply system of the second substrate treatment apparatus, and arranging the treatment process, and in this step, the treatment process of the second substrate treatment apparatus performed using the process recipe conforms to the treatment process of the first substrate treatment apparatus performed using the process recipe.

公开(公告)号：US20220216035A1

公开(公告)日：2022-07-07

申请号：US17703503

申请日：2022-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro UEDA ,  Jun HIROSE

IPC: H01J37/32

Abstract: A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

公开(公告)号：US20210257197A1

公开(公告)日：2021-08-19

申请号：US17178273

申请日：2021-02-18

Applicant: Tokyo Electron Limited

Inventor： Risako MATSUDA ,  Jun HIROSE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66

Abstract: A substrate processing method is provided. The substrate processing method includes (a) placing a substrate on a substrate support disposed in a chamber, the substrate having a plurality of flow sensors on a surface of the substrate; (b) supplying a processing gas into the chamber; and (c) measuring magnitudes and directions of flows of the processing gas on the surface of the substrate using the plurality of flow sensors.

公开(公告)号：US20200219753A1

公开(公告)日：2020-07-09

申请号：US16737267

申请日：2020-01-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei UCHIDA ,  Jun HIROSE

IPC: H01L21/687 ,  H01L21/683 ,  H01J37/32

Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

公开(公告)号：US20180350566A1

公开(公告)日：2018-12-06

申请号：US15997776

申请日：2018-06-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiro TOBE ,  Jun HIROSE

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a mounting table, a power supply unit and a power supply control unit. The mounting table has therein a coil provided along a mounting surface on which a focus ring is mounted. The power supply unit is configured to apply a high frequency voltage to the coil. The power supply control unit is configured to control the power supply unit to increase a power of the high frequency voltage applied to the coil in accordance with consumption of the focus ring.

公开(公告)号：US20180061619A1

公开(公告)日：2018-03-01

申请号：US15692357

申请日：2017-08-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shin MATSUURA ,  Jun HIROSE

IPC: H01J37/32 ,  H01J37/18

CPC classification number: H01J37/32807 ,  H01J37/18 ,  H01J37/32009 ,  H01J37/32513 ,  H01J37/32743 ,  H01L21/67126 ,  H01L21/6719

Abstract: A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.