公开(公告)号：US20230386798A1

公开(公告)日：2023-11-30

申请号：US18199401

申请日：2023-05-19

Applicant: Tokyo Electron Limited

Inventor： Mohd Fairuz BIN BUDIMAN ,  Shinya MORIKITA ,  Masafumi URAKAWA

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J37/3244

Abstract: There is provided a substrate processing apparatus comprising: a plasma processing chamber; a support accommodated in the plasma processing chamber; an inner edge ring provided around a substrate; an outer edge ring provided around the inner edge ring, the outer edge ring having an inner peripheral portion overlapping an outer peripheral portion of the inner edge ring when viewed from above and having a first alignment portion; an outer edge ring electrostatic chuck disposed at a position of the support, the position facing the outer edge ring; and a lifter configured to move the inner edge ring and/or the outer edge ring up and down. The inner edge ring is configured to be aligned with the outer edge ring by the first alignment portion in a state in which the outer edge ring electrostatic chuck is driven and the outer edge ring is attracted.

公开(公告)号：US20250157799A1

公开(公告)日：2025-05-15

申请号：US19021566

申请日：2025-01-15

Applicant: Tokyo Electron Limited

Inventor： Mohd Fairuz BIN BUDIMAN ,  Shinya MORIKITA

IPC: H01J37/32

Abstract: A monitoring method includes determining first power provided to heaters each located in a corresponding zone of a plurality of zones in a substrate support in a chamber. The first power is provided when plasma is generated in the chamber and each zone is controlled to be at a constant temperature with the corresponding heater in the zone. The monitoring method further includes determining a heat flux from the plasma to each zone. The heat flux from the plasma to each zone is obtained by dividing a difference between second power and the first power provided to the corresponding heater in the zone by an area of the zone. The second power to the corresponding heater in the zone is provided when no plasma is generated in the chamber and the zone is controlled to be at the constant temperature with the corresponding heater in the zone.

公开(公告)号：US20210043431A1

公开(公告)日：2021-02-11

申请号：US16979799

申请日：2019-06-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mohd Fairuz BIN BUDIMAN ,  Hiroshi TSUJIMOTO

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H01L21/3065 ,  H01L21/66

Abstract: In a plasma etching method for etching a target object by plasma in a state where a pressure in a processing container having a consumable member is maintained at a constant level, variation of time for temperature decrease of the consumable member from a first temperature to a second temperature lower than the first temperature or variation of speed of the temperature decrease of the consumable member from the first temperature to the second temperature is measured. Further, a degree of consumption of the consumable member is estimated from the variation of time or the variation of speed based on information on correlation between the variation of time or the variation of speed and the degree of consumption of the consumable member.

公开(公告)号：US20250046573A1

公开(公告)日：2025-02-06

申请号：US18922549

申请日：2024-10-22

Applicant: Tokyo Electron Limited

Inventor： Mohd Fairuz BIN BUDIMAN

IPC: H01J37/32

Abstract: A plasma processing apparatus disclosed herein includes a chamber, a substrate support, one or more radio-frequency power supplies, and a correction power supply. The one or more radio-frequency power supplies supply one or more radio-frequency powers to the chamber in an ON period in which plasma is generated from a gas in the chamber. The correction power supply applies the negative voltage to the edge ring in one or more first periods in the ON period. Each of the one or more first periods corresponds to a plurality of times of a longest waveform cycle among waveform cycles of the one or more radio-frequency powers. The correction power supply stops the application of the negative voltage to the edge ring in a one or more second periods in the ON period. Each of the one or more second periods corresponds to the plurality of times of the longest waveform cycle.

公开(公告)号：US20220122813A1

公开(公告)日：2022-04-21

申请号：US17501986

申请日：2021-10-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mohd Fairuz BIN BUDIMAN ,  Shu KINO ,  Joji TAKAYOSHI

IPC: H01J37/32 ,  H01L21/67

Abstract: There is provided a substrate processing system. The system comprises: a substrate processing device having a processing container configured to perform processing of a substrate, and a direct current (DC) power source configured to apply a DC voltage to a specific part in the processing container; and a controller configured to control the substrate processing device. A process performed by the controller includes a process of acquiring desired process conditions and a real value of the DC voltage measured during processing of the substrate based on the process conditions, and a process of creating a regression analysis equation which calculates an estimated value of the DC voltage using a plurality of conditions among the process conditions as explanatory variables based on the acquired process conditions and real value of the DC voltages.

公开(公告)号：US20200328064A1

公开(公告)日：2020-10-15

申请号：US16844449

申请日：2020-04-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mohd Fairuz BIN BUDIMAN ,  Shinya MORIKITA ,  Toshifumi NAGAIWA

IPC: H01J37/32 ,  H05H1/46

Abstract: A cleaning method is provided. In the cleaning method, a cleaning gas is supplied into a processing chamber, a radio frequency (RF) power for plasma generation is applied to one of a first electrode on which a substrate is to be mounted and a second electrode disposed to be opposite to the first electrode in the processing chamber, and a negative voltage is applied to an edge ring disposed to surround the substrate. Further, plasma is generated from the cleaning gas and a cleaning process using the plasma is performed.