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公开(公告)号：US20230005753A1
公开(公告)日：2023-01-05
申请号：US17856251
申请日：2022-07-01
发明人： Fumiya TAKATA , Shota YOSHIMURA , Shinya MORIKITA , Kota OIKAWA
IPC分类号： H01L21/311 , H01L21/02 , H01J37/32
摘要： An etching method includes: (a) providing a substrate including a first region containing silicon and nitrogen and a second region containing silicon and oxygen; (b) forming a tungsten-containing deposit on the first region using a first plasma generated from a first processing gas containing fluorine, tungsten, and at least one selected from a group consisting of carbon and hydrogen; and (c) after (b), etching the second region using a second plasma generated from a second processing gas different from the first processing gas.
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公开(公告)号：US20200328064A1
公开(公告)日：2020-10-15
申请号：US16844449
申请日：2020-04-09
摘要： A cleaning method is provided. In the cleaning method, a cleaning gas is supplied into a processing chamber, a radio frequency (RF) power for plasma generation is applied to one of a first electrode on which a substrate is to be mounted and a second electrode disposed to be opposite to the first electrode in the processing chamber, and a negative voltage is applied to an edge ring disposed to surround the substrate. Further, plasma is generated from the cleaning gas and a cleaning process using the plasma is performed.
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公开(公告)号：US20230386798A1
公开(公告)日：2023-11-30
申请号：US18199401
申请日：2023-05-19
IPC分类号： H01J37/32
CPC分类号： H01J37/32642 , H01J37/32715 , H01J37/3244
摘要： There is provided a substrate processing apparatus comprising: a plasma processing chamber; a support accommodated in the plasma processing chamber; an inner edge ring provided around a substrate; an outer edge ring provided around the inner edge ring, the outer edge ring having an inner peripheral portion overlapping an outer peripheral portion of the inner edge ring when viewed from above and having a first alignment portion; an outer edge ring electrostatic chuck disposed at a position of the support, the position facing the outer edge ring; and a lifter configured to move the inner edge ring and/or the outer edge ring up and down. The inner edge ring is configured to be aligned with the outer edge ring by the first alignment portion in a state in which the outer edge ring electrostatic chuck is driven and the outer edge ring is attracted.
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公开(公告)号：US20220406613A1
公开(公告)日：2022-12-22
申请号：US17842791
申请日：2022-06-17
发明人： Fumiya TAKATA , Shota YOSHIMURA , Shinya MORIKITA
IPC分类号： H01L21/311 , H01L21/02
摘要： An etching method includes: preparing a substrate including a first region containing silicon and nitrogen, and a second region containing silicon and oxygen; and etching the second region while firming a tungsten-containing protective layer on the first region, by exposing the first and second regions to plasma generated from a processing gas containing carbon, fluorine, and tungsten.
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公开(公告)号：US20210313187A1
公开(公告)日：2021-10-07
申请号：US17269602
申请日：2019-08-08
IPC分类号： H01L21/311 , H01L21/027 , H01L21/3213
摘要： A treatment method is provided that includes an embedding step of embedding an organic film in an undercoat film in which a depression is formed; and an etching step of performing etching, after the embedding step, until at least a portion of a top of the undercoat film is exposed.
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公开(公告)号：US20190252198A1
公开(公告)日：2019-08-15
申请号：US16315812
申请日：2017-07-04
发明人： Shinya MORIKITA , Takanori BANSE , Yuta SEYA , Ryosuke NIITSUMA
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/311
摘要： A method MT according to an embodiment provides a technique capable of controlling a pattern shape during processing of an organic film and the like. A wafer W as an object to which the method MT in the embodiment is applied includes an etching target layer EL, an organic film OL, and a mask ALM, the organic film OL is constituted by a first region VL1 and a second region VL2, the mask ALM is provided on the first region VL1, the first region VL1 is provided on the second region VL2, and the second region VL2 is provided on the etching target layer EL. In the method MT, the first region VL1 is etched to reach the second region VL2 by generating a plasma of a gas containing nitrogen gas in the processing container 12 in which the wafer W is accommodated, a mask OLM1 is formed from the first region VL1, a protective film SX is conformally formed on a side surface SF of the mask OLM1, the second region VL2 is etched to reach the etching target layer EL to form a mask OLM2 from the second region VL2.
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公开(公告)号：US20240162045A9
公开(公告)日：2024-05-16
申请号：US17842791
申请日：2022-06-17
发明人： Fumiya TAKATA , Shota YOSHIMURA , Shinya MORIKITA
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/31116 , H01L21/02126 , H01J37/32091
摘要： An etching method includes: preparing a substrate including a first region containing silicon and nitrogen, and a second region containing silicon and oxygen; and etching the second region while firming a tungsten-containing protective layer on the first region, by exposing the first and second regions to plasma generated from a processing gas containing carbon, fluorine, and tungsten.
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公开(公告)号：US20180233331A1
公开(公告)日：2018-08-16
申请号：US15896435
申请日：2018-02-14
IPC分类号： H01J37/32 , H01L21/311 , H01L21/02 , C23C16/455
CPC分类号： H01J37/32183 , C23C16/26 , C23C16/4405 , C23C16/45523 , C23C16/509 , H01J37/32449 , H01J37/32862 , H01J2237/334 , H01L21/0234 , H01L21/31116 , H01L21/768 , H01L21/76897
摘要： A plasma processing method is provided that includes applying a radio frequency power to an upper electrode of a chamber, and performing a coating process by supplying a coating gas, including a carbon-containing gas, to an interior of the chamber to generate a plasma from the supplied coating gas, and coating the interior of the chamber with a carbon film using the plasma generated from the coating gas. The plasma processing method further includes performing an etching process after the coating process by supplying an etching gas, including a fluorocarbon-containing gas, to the interior of the chamber to generate a plasma from the supplied etching gas and etching a first silicon-containing film that is arranged on a second silicon-containing film covering an electrode formed on a workpiece using the plasma generated from the etching gas.
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公开(公告)号：US20180197720A1
公开(公告)日：2018-07-12
申请号：US15865841
申请日：2018-01-09
摘要： In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film. The silicon-containing film is removed from the surface of the carbon-containing film by using a plasma of a fluorine-containing gas after the target object processed by the plasma is unloaded from the chamber, and the carbon-containing film is removed from the surfaces of the components by using a plasma of an oxygen-containing gas.
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公开(公告)号：US20170345666A1
公开(公告)日：2017-11-30
申请号：US15605531
申请日：2017-05-25
发明人： Shinya MORIKITA , Ryosuke NIITSUMA , Weichien CHEN
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/311 , H01L21/308 , H01J37/32 , H01L21/683
CPC分类号： H01L21/3065 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/3255 , H01J37/32559 , H01J37/32568 , H01J37/32715 , H01J37/32724 , H01J2237/3341 , H01L21/0273 , H01L21/3081 , H01L21/3086 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32139 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask.
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