SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20230349036A1

    公开(公告)日:2023-11-02

    申请号:US18299904

    申请日:2023-04-13

    CPC classification number: C23C14/566 C23C14/568 C23C16/4412 C23C16/46

    Abstract: With respect to a substrate processing method performed by a substrate processing apparatus including a vacuum chamber, a stage disposed in the vacuum chamber and including a heater, a gas supply that supplies a gas into the vacuum chamber, an exhaust device that exhaust the gas in the vacuum chamber, and an electrode installed in the vacuum chamber, the electrode being connected to the stage and applying a voltage to the heater, the substrate processing method includes performing a discharge countermeasure process including lowering the voltage applied to the heater while a pressure in the vacuum chamber is within a discharge pressure range, the discharge pressure range being determined based on Paschen's law as a pressure range in which discharge occurs in the vacuum chamber, and applying the voltage to the heater in response to determining that the pressure in the vacuum chamber is out of the discharge pressure range.

    SUBSTRATE PROCESSING METHOD AND APPARATUS
    2.
    发明申请

    公开(公告)号:US20200294767A1

    公开(公告)日:2020-09-17

    申请号:US16810585

    申请日:2020-03-05

    Abstract: A substrate processing apparatus for performing a predetermined processing on a substrate includes a power supply device configured to supply a DC power. The power supply device includes a power supply and a current detection unit configured to detect a current value of a DC power from the power supply. The current detection unit includes a plurality of current sensors used for detecting the current value in the current detection unit and having different detection ranges for the current value, and a switching unit configured to switch the current sensors. The power supply is controlled such that the DC power from the power supply is maintained at a set value based on a detection result of the current detection unit, and the switching unit switches the current sensors depending on the set value of the DC power from the power supply.

    FILM FORMATION METHOD AND FILM FORMATION APPARATUS

    公开(公告)号:US20240183027A1

    公开(公告)日:2024-06-06

    申请号:US18519586

    申请日:2023-11-27

    Inventor: Naoki TAKAHASHI

    Abstract: A film formation method includes: providing a film formation apparatus including a substrate support, a target holder, and a magnet unit; forming a film on a substrate by a magnetron sputtering of a target; and performing a serial communication monitoring to repeatedly acquire information on power from a power supply through serial communication. The magnet unit oscillates in a predetermined direction along the target, and the serial communication is performed to switch the power supplied to the target holder when the magnet unit reaches a predetermined power switch position while oscillating, such that when the magnet unit faces the end of the target, the power increases, and when the magnet unit faces the center of the target, the power decreases. The serial communication monitoring stops at least from a predetermined time before the time point when the magnet unit reaches the power switching position until the serial communication is completed.

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