-
公开(公告)号：US20240360543A1
公开(公告)日：2024-10-31
申请号：US18573740
申请日：2022-06-16
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Naoki KUBOTA
CPC classification number: C23C14/3407 , C23C14/50 , C23C14/54 , C23C14/564
Abstract: This film-forming apparatus comprises a processing container, a sputtering target provided in the processing container, a pedestal having a mounting surface for mounting of a substrate in the processing container, a shutter member capable of covering the mounting surface, a conveyance mechanism for carrying in and carrying out the shutter member to/from the pedestal, a detection unit that is provided to the conveyance mechanism itself and detects an indicator relating to the presence/absence of the shutter member, and a processing unit for determining whether the shutter member is present/absent with respect to the conveyance mechanism on the basis of the detection result from the detection unit.
-
公开(公告)号：US20230349036A1
公开(公告)日：2023-11-02
申请号：US18299904
申请日：2023-04-13
Applicant: Tokyo Electron Limited
Inventor： Masato SHINADA , Junichi TAKEI , Naoki TAKAHASHI
CPC classification number: C23C14/566 , C23C14/568 , C23C16/4412 , C23C16/46
Abstract: With respect to a substrate processing method performed by a substrate processing apparatus including a vacuum chamber, a stage disposed in the vacuum chamber and including a heater, a gas supply that supplies a gas into the vacuum chamber, an exhaust device that exhaust the gas in the vacuum chamber, and an electrode installed in the vacuum chamber, the electrode being connected to the stage and applying a voltage to the heater, the substrate processing method includes performing a discharge countermeasure process including lowering the voltage applied to the heater while a pressure in the vacuum chamber is within a discharge pressure range, the discharge pressure range being determined based on Paschen's law as a pressure range in which discharge occurs in the vacuum chamber, and applying the voltage to the heater in response to determining that the pressure in the vacuum chamber is out of the discharge pressure range.
-
公开(公告)号：US20220223390A1
公开(公告)日：2022-07-14
申请号：US17573368
申请日：2022-01-11
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Tetsuya MIYASHITA , Naoki WATANABE
Abstract: There is provided a film formation apparatus which forms a film on a substrate by sputtering. The apparatus comprises: a substrate holder configured to hold the substrate; and a plurality of cathodes configured to hold targets that emit sputtered particles, and connected to a power supply. At least one of the plurality of cathodes holds the targets of a plurality of types.
-
公开(公告)号：US20200051796A1
公开(公告)日：2020-02-13
申请号：US16531782
申请日：2019-08-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Hiroyuki TOSHIMA
Abstract: A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.
-
公开(公告)号：US20200048759A1
公开(公告)日：2020-02-13
申请号：US16534116
申请日：2019-08-07
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Hiroyuki TOSHIMA
Abstract: There is provided a film forming apparatus, including: a processing chamber having a processing space in which a film forming process is performed on a substrate; a substrate support part configured to support the substrate inside the processing chamber; at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; and at least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate, wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, and a portion of the film is etched by the etching particles emitted from the at least one etching particle emission part.
-
Patent Agency Ranking
公开(公告)号：US20230323538A1
公开(公告)日：2023-10-12
申请号：US18193569
申请日：2023-03-30
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yusuke KIKUCHI , Masato SHINADA
IPC: C23C16/46 , C23C16/455 , C23C16/458
CPC classification number: C23C16/466 , C23C16/45561 , C23C16/4584 , C23C16/4586
Abstract: There is provided a substrate processing method for a substrate processing apparatus. The substrate processing apparatus comprises: a processing chamber; a placing stand provided inside the processing chamber, configured to place a substrate on a placing surface, and having a gas path; a freezing device having a contact surface to be in contact with or separated from a surface to be contacted of the placing stand and configured to cool the placing stand; a gas supply pipe connected to the gas path and configured to introduce a heat transfer gas; and a cooling part provided outside the processing chamber and connected to the gas supply pipe. The substrate processing method comprises: (a) cooling the heat transfer gas by the cooling part; and (b) supplying the cooled heat transfer gas between the placing surface and a back surface of the substrate from the gas path through the gas supply pipe.
-
公开(公告)号：US20220328343A1
公开(公告)日：2022-10-13
申请号：US17657962
申请日：2022-04-05
Applicant: Tokyo Electron Limited
Inventor： Takuya UMISE , Masato SHINADA , Tetsuya MIYASHITA
IPC: H01L21/687
Abstract: A processing method for processing a substrate includes: a first arrangement step of mounting, on a stage provided in a processing container to mount the substrate on the stage, a plate-shaped protective member which is prepared in advance at a location in the processing container different from a location on the stage and which is configured to protect an upper surface of the stage; an adjustment step of adjusting a distance between the stage and an annular cover member provided above an edge portion of the stage to a second distance different from a first distance between the stage and the cover member when the substrate is processed; and a pretreatment step of performing a pretreatment in the processing container to change a state in the processing container to a predetermined state, wherein the protective member has a thickness different from a thickness of the substrate.
-
公开(公告)号：US20220238314A1
公开(公告)日：2022-07-28
申请号：US17574997
申请日：2022-01-13
Applicant: TOKYO ELECTRON LIMITED
Inventor： Motoi YAMAGATA , Hiroshi SONE , Masato SHINADA
Abstract: A mounting table structure includes a mounting table on which a substrate is mounted, a refrigerating mechanism configured to cool the substrate, an elevating drive part configured to move the mounting table or the refrigerating mechanism up and down, and at least one contact provided at a position between the refrigerating mechanism and the mounting table which face each other. The refrigerating mechanism and the mounting table are allowed to be brought into contact with each other via the contact by moving the mounting table or the refrigerating mechanism up and down by the elevating drive part.
-
公开(公告)号：US20190252165A1
公开(公告)日：2019-08-15
申请号：US16246285
申请日：2019-01-11
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masato SHINADA , Naoki WATANABE , Tetsuya MIYASHITA , Hiroaki CHIHAYA
CPC classification number: H01J37/3405 , C23C14/35 , H01J37/3417 , H01J37/3447 , H01J37/3452 , H01J2237/332
Abstract: A film forming system comprises a chamber, a stage, a holder, a cathode magnet, a shield, a first moving mechanism, and a second moving mechanism. The chamber provides a processing space. The stage is provided in the processing space and configured to support a substrate. The holder is configured to hold a target that is provided in the processing space. The cathode magnet is provided outside the chamber with respect to the target. The shield has a slit and is configured to block particles released from the target around the slit. The first moving mechanism is configured to move the shield between the stage and the target along a scanning direction substantially parallel to a surface of the substrate mounted on the stage. The second moving mechanism is configured to move the cathode magnet along the scanning direction.
-
公开(公告)号：US20250122625A1
公开(公告)日：2025-04-17
申请号：US18834129
申请日：2023-01-25
Applicant: TOKYO ELECTRON LIMITED
Inventor： Motoi YAMAGATA , Hiroshi SONE , Masato SHINADA , Yusuke KIKUCHI
IPC: C23C16/46
Abstract: Provided is a substrate processing apparatus that has an improved cooling performance. This substrate processing apparatus comprises: a placing table which is provided in a processing container and on which a substrate is to be placed; a refrigerator that has a contacting surface that makes contact with or is separated from a contact target surface of the placing table, and cools the placing table; and a lifting/lowering device that lifts or lowers the refrigerator and generates a pressing force for pressing the refrigerator against the placing table.
-
-
-
-
-
-
-
-
-
Search Results
18
records
(took 0.016 seconds)
