公开(公告)号：US20250164891A1

公开(公告)日：2025-05-22

申请号：US18511327

申请日：2023-11-16

Applicant: Tokyo Electron Limited

Inventor： Soo Doo Chae ,  Jiwoo Kim ,  Hojin Kim ,  Choong-man Lee ,  Tek Po Rinus Lee ,  Ornella Sathoud

IPC: G03F7/00 ,  G03F1/46 ,  G03F1/50 ,  G03F1/80 ,  G03F7/004 ,  G03F7/075

Abstract: An example lithography stack includes a first layer including an organic material, a second layer disposed over the first layer, where the second layer includes a dielectric material. The lithography stack includes a third layer disposed over the second layer, where the third layer includes a metallic material. The lithography stack includes a fourth layer disposed over the third layer, where the fourth layer includes an extreme ultraviolet (EUV) photoresist.

公开(公告)号：US12290835B2

公开(公告)日：2025-05-06

申请号：US17867010

申请日：2022-07-18

Applicant: Tokyo Electron Limited

Inventor： Omid Zandi ,  Jacques Faguet ,  Ornella Sathoud

IPC: H01L21/02 ,  B05D1/00

Abstract: The present disclosure provides embodiments of processes and methods for stabilizing self-assembled monolayers (SAMs). In the present disclosure, a cyclic vapor deposition process is used to selectively deposit a polymer thin film on a SAM structure formed on a target material. The polymer thin film selectively deposited on the SAM structure stabilizes the SAM structure by: (a) healing defects in the SAM structure and providing blanket coverage over the target material surface, (b) preventing migration of SAM-forming molecules to neighboring non-target surfaces, and (c) increasing the thickness and rigidity of the SAM structure. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the SAM structure.

公开(公告)号：US20240017290A1

公开(公告)日：2024-01-18

申请号：US17867010

申请日：2022-07-18

Applicant: Tokyo Electron Limited

Inventor： Omid Zandi ,  Jacques Faguet ,  Ornella Sathoud

IPC: B05D1/00 ,  H01L21/02

CPC classification number: B05D1/60 ,  H01L21/0228 ,  H01L21/02118 ,  H01L21/02205

Abstract: The present disclosure provides embodiments of processes and methods for stabilizing self-assembled monolayers (SAMs). In the present disclosure, a cyclic vapor deposition process is used to selectively deposit a polymer thin film on a SAM structure formed on a target material. The polymer thin film selectively deposited on the SAM structure stabilizes the SAM structure by: (a) healing defects in the SAM structure and providing blanket coverage over the target material surface, (b) preventing migration of SAM-forming molecules to neighboring non-target surfaces, and (c) increasing the thickness and rigidity of the SAM structure. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the SAM structure.

公开(公告)号：US11691175B1

公开(公告)日：2023-07-04

申请号：US17866897

申请日：2022-07-18

Applicant: Tokyo Electron Limited

Inventor： Omid Zandi ,  Jacques Faguet ,  Ornella Sathoud

IPC: B32B38/04 ,  B05D1/00 ,  B05D5/12

CPC classification number: B05D1/60 ,  B05D5/12 ,  B05D2202/00

Abstract: The present disclosure provides embodiments of improved area-selective deposition (ASD) processes and methods for selectively depositing polymer films on a variety of different target material. More specifically, the present disclosure provides improved ASD processes and related methods that use a cyclic vapor deposition process, which sequentially exposes a surface of a substrate to a polymer precursor followed by an initiator to selectively deposit a polymer thin film on a target material exposed on the substrate surface. The process of sequentially exposing the substrate surface to the precursor and the initiator can be repeated for one or more cycles of the cyclic vapor deposition process until a predetermined thickness of the polymer thin film is selectively deposited on the target material. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the target material.