公开(公告)号：US11798793B2

公开(公告)日：2023-10-24

申请号：US17583224

申请日：2022-01-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi Ohuchida ,  Koki Mukaiyama ,  Yusuke Wako ,  Maju Tomura ,  Yoshihide Kihara

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  B08B13/00 ,  B08B3/08

CPC classification number: H01J37/32724 ,  B08B3/08 ,  B08B5/00 ,  B08B13/00 ,  H01L21/0206 ,  H01L21/31138 ,  H01L21/31144 ,  H01J2237/334

Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.

公开(公告)号：US11417535B2

公开(公告)日：2022-08-16

申请号：US17090964

申请日：2020-11-06

Applicant: Tokyo Electron Limited

Inventor： Takahiro Yokoyama ,  Maju Tomura ,  Yoshihide Kihara ,  Satoshi Ohuchida

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/20 ,  H01J37/32

Abstract: A technique protects a mask in plasma etching of a silicon-containing film. An etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask. The mask contains carbon. The etching method further includes etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen and phosphorus. The etching includes forming a carbon-phosphorus bond on a surface of the mask.

公开(公告)号：US11139169B2

公开(公告)日：2021-10-05

申请号：US16902209

申请日：2020-06-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho Kumakura ,  Satoshi Ohuchida ,  Maju Tomura

IPC: H01L21/033 ,  H01L21/67 ,  H01L21/311

Abstract: An etching method and an etching apparatus improve the shape of a mask deformed by an etching process. The etching method for etching a film with plasma includes a step of providing a substrate, an etching step, and a correction step. In the step of providing a substrate, a substrate having a mask formed on a first film is provided. In the etching step, the first film is etched with plasma generated from a first gas containing Xe, Kr, or Rn so that an aspect ratio of a hole or a groove formed in the first film is 30 or more. In the correction step, the shape of the mask is corrected with plasma generated from a second gas.