公开(公告)号：US11495469B2

公开(公告)日：2022-11-08

申请号：US17107967

申请日：2020-12-01

申请人： Tokyo Electron Limited

发明人： Toru Hisamatsu ,  Masanobu Honda ,  Yoshihide Kihara

IPC分类号： H01L21/311 ,  H01L21/027 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/033

摘要： A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which an underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing an anisotropic deposition to selectively form a deposition layer on a top portion of the mask.

公开(公告)号：US11459655B2

公开(公告)日：2022-10-04

申请号：US16522890

申请日：2019-07-26

申请人： TOKYO ELECTRON LIMITED

发明人： Michiko Nakaya ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

摘要： A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US11456180B2

公开(公告)日：2022-09-27

申请号：US16930483

申请日：2020-07-16

申请人： Tokyo Electron Limited

发明人： Takahiro Yokoyama ,  Maju Tomura ,  Yoshihide Kihara ,  Ryutaro Suda ,  Takatoshi Orui

IPC分类号： H01L21/3065 ,  H01L21/02 ,  H01J37/32

摘要： An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.

公开(公告)号：US11133192B2

公开(公告)日：2021-09-28

申请号：US16731456

申请日：2019-12-31

申请人： TOKYO ELECTRON LIMITED

发明人： Masahiro Tabata ,  Toru Hisamatsu ,  Yoshihide Kihara

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/683 ,  H01L21/02 ,  H01L21/67 ,  H01L21/311 ,  H01L21/28

摘要： An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.

公开(公告)号：US20210233775A1

公开(公告)日：2021-07-29

申请号：US17149067

申请日：2021-01-14

申请人： Tokyo Electron Limited

发明人： Du Zhang ,  Manabu Iwata ,  Yu-Hao Tsai ,  Takahiro Yokoyama ,  Yanxiang Shi ,  Yoshihide Kihara ,  Wataru Sakamoto ,  Mingmei Wang

IPC分类号： H01L21/311

摘要： A method of high-throughput dry etching of silicon oxide and silicon nitride materials by in-situ autocatalyst formation. The method includes providing a substrate having a film thereon in a process chamber, the film containing silicon oxide, silicon nitride, or both silicon oxide and silicon nitride, introducing an etching gas containing fluorine and hydrogen, and setting a gas pressure in the process chamber that is between about 1 mTorr and about 300 mTorr, and a substrate temperature that is below about −30° C. The method further includes plasma-exciting the etching gas, and exposing the film to the plasma-excited etching gas, where the film is continuously etched during the exposing.

公开(公告)号：US11056370B2

公开(公告)日：2021-07-06

申请号：US16322863

申请日：2017-08-01

申请人： TOKYO ELECTRON LIMITED

发明人： Shuhei Ogawa ,  Keigo Toyoda ,  Yoshihide Kihara

IPC分类号： H01L21/683 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/67 ,  H01L21/027 ,  H01L21/687 ,  H01L21/3213 ,  H01L21/768 ,  H01J37/32 ,  H01L27/11582 ,  H01L27/11556

摘要： A method according to an embodiment includes: (a) a first step of etching a workpiece held by a holding structure in a state in which a first direction and a second direction are maintained to form a first angle, by a plasma generated in a processing container; and (a) a second step of, after execution of the first step, etching the workpiece held by the holding structure in a state in which the first direction and the second direction are maintained to form a second angle, by the plasma generated in the processing container.

公开(公告)号：US10777422B2

公开(公告)日：2020-09-15

申请号：US16678741

申请日：2019-11-08

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihide Kihara ,  Toru Hisamatsu ,  Masanobu Honda

IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/033 ,  H01L21/324

摘要： In a method according to an embodiment, before etching a target layer of a wafer, a main surface of the target layer is divided into a plurality of areas. A difference value between a groove width of a mask and a reference value of the groove width is calculated for each of the plurality of areas, a temperature of the target layer is adjusted by using correspondence data indicating correspondence between a temperature of the target layer and a film thickness of a formed film. Then, a film is formed on the mask for each atom layer, and a film having a film thickness corresponding to the difference value is formed on the mask to correct the groove width in each of the plurality of areas to the reference value.

公开(公告)号：US10763123B2

公开(公告)日：2020-09-01

申请号：US16089071

申请日：2017-03-27

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihide Kihara ,  Toru Hisamatsu

IPC分类号： H01L21/311 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/027

摘要： In an embodiment, a wafer W includes a layer EL to be etched and a mask MK4 provided on the layer EL to be etched, and a method MT of an embodiment, the layer EL to be etched is etched by removing the layer EL to be etched for each atomic layer, by repeating sequence SQ3 including step ST9a of irradiating the mask MK4 with secondary electrons by generating plasma and applying a DC voltage to an upper electrode 30 of a parallel plate electrode, and covering the mask MK4 with silicon oxide compound, step ST9b of generating plasma of fluorocarbon-based gas and forming a mixed layer MX2 including radicals on an atomic layer of the layer EL to be etched, and ST9d of generating plasma of Ar gas and applying a bias voltage to remove the mixed layer MX2.

公开(公告)号：US10566209B2

公开(公告)日：2020-02-18

申请号：US16118982

申请日：2018-08-31

申请人： Tokyo Electron Limited

发明人： Yu Nagatomo ,  Yoshihide Kihara

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/033 ,  H01L21/285

摘要： An etching method can protect a mask with a material having higher etching resistance to a silicon-containing film. The etching method is performed in a state that a processing target object is placed within a chamber main body. The etching method includes forming a tungsten film on the processing target object and etching the silicon-containing film of the processing target object. The forming of the tungsten film includes supplying a gaseous tungsten-containing precursor onto the processing target object; and generating plasma of a hydrogen gas to supply active species of hydrogen to the precursor on the processing target object. In the etching of the silicon-containing film, plasma of a processing gas containing fluorine, hydrogen and carbon is generated within the chamber main body.

公开(公告)号：US20190326125A1

公开(公告)日：2019-10-24

申请号：US16458378

申请日：2019-07-01

申请人： Tokyo Electron Limited

发明人： Yoshihide Kihara ,  Toru Hisamatsu ,  Masahiro Tabata

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/02 ,  C23C16/455 ,  C23C16/04 ,  H01J37/32

摘要： A method includes anisotropically etching an etching target layer of a target object through an opening of the target object by generating plasma of a first gas within a processing vessel in which the target object is accommodated; and then forming a film on an inner surface of the opening by repeating a sequence comprising: a first process of supplying a second gas into the processing vessel; a second process of purging a space within the processing vessel; a third process of generating plasma of a third gas containing an oxygen atom within the processing vessel; and a fourth process of purging the space within the processing vessel. The first gas contains a carbon atom and a fluorine atom. The second gas contains an aminosilane-based gas. The etching target layer is a hydrophilic insulating layer containing silicon. Plasma of the first gas is not generated in the first process.