公开(公告)号：US11322350B2

公开(公告)日：2022-05-03

申请号：US16868277

申请日：2020-05-06

Applicant: Tokyo Electron Limited

Inventor： Daisuke Ito ,  Subhadeep Kal ,  Shinji Irie ,  Aelan Mosden

IPC: H01L21/3065 ,  H01L21/027 ,  H01J37/32 ,  H01L21/67 ,  G03F7/20

Abstract: Embodiments provide a non-plasma etch, such as a gas-phase and/or remote plasma etch, of titanium-containing material layers with tunable selectivity to other material layers. A substrate is received within a process chamber, and the substrate has exposed material layers including a titanium-containing material layer and at least one additional material layer. The additional material layer is selectively etched with respect to the titanium-containing material layer by exposing the substrate to a controlled environment including a halogen-containing gas. For one embodiment, the halogen-containing gas includes a fluorine-based gas. For one embodiment, the titanium-containing material layer is a titanium or a titanium nitride material layer. For one embodiment, the additional material layer includes tungsten, tungsten oxide, hafnium oxide, silicon oxide, silicon-germanium, silicon, silicon nitride, and/or aluminum oxide. A non-selective etch with respect to the titanium-containing material layer can be performed by modulating the process parameters such as temperature.

公开(公告)号：US10665470B2

公开(公告)日：2020-05-26

申请号：US16232532

申请日：2018-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo Asada ,  Takehiko Orii ,  Shinji Irie ,  Nobuhiro Takahashi ,  Ayano Hagiwara ,  Tatsuya Yamaguchi

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/67 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/687

Abstract: There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

公开(公告)号：US20210057213A1

公开(公告)日：2021-02-25

申请号：US16868277

申请日：2020-05-06

Applicant: Tokyo Electron Limited

Inventor： Daisuke Ito ,  Subhadeep Kal ,  Shinji Irie ,  Aelan Mosden

IPC: H01L21/027 ,  H01L21/3065 ,  G03F7/20 ,  H01J37/32 ,  H01L21/67

Abstract: Embodiments provide a non-plasma etch, such as a gas-phase and/or remote plasma etch, of titanium-containing material layers with tunable selectivity to other material layers. A substrate is received within a process chamber, and the substrate has exposed material layers including a titanium-containing material layer and at least one additional material layer. The additional material layer is selectively etched with respect to the titanium-containing material layer by exposing the substrate to a controlled environment including a halogen-containing gas. For one embodiment, the halogen-containing gas includes a fluorine-based gas. For one embodiment, the titanium-containing material layer is a titanium or a titanium nitride material layer. For one embodiment, the additional material layer includes tungsten, tungsten oxide, hafnium oxide, silicon oxide, silicon-germanium, silicon, silicon nitride, and/or aluminum oxide. A non-selective etch with respect to the titanium-containing material layer can be performed by modulating the process parameters such as temperature.

公开(公告)号：US11189498B2

公开(公告)日：2021-11-30

申请号：US16413068

申请日：2019-05-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiko Orii ,  Yasuo Asada ,  Jun Lin ,  Ayano Hagiwara ,  Shinji Irie ,  Kenji Tanouchi ,  Kakeru Wada

IPC: H01L21/3213 ,  H01L21/67

Abstract: There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an F2 gas and the second fluorine-containing gas including at least a ClF3 gas, an IF7 gas, an IF5 gas or an SF6 gas.