公开(公告)号：US20240207882A1

公开(公告)日：2024-06-27

申请号：US18419592

申请日：2024-01-23

Applicant: Tokyo Electron Limited

Inventor： Takayuki ISHII ,  Kazuya NAGASEKI ,  Michishige SAITO

IPC: B05C5/02 ,  B05C11/10 ,  B05C17/005 ,  C23C14/00 ,  C23C16/455

CPC classification number: B05C5/02 ,  B05C11/1013 ,  B05C17/00536 ,  C23C14/0042 ,  C23C14/0063 ,  C23C16/45557

Abstract: A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

公开(公告)号：US20150096492A1

公开(公告)日：2015-04-09

申请号：US14481998

申请日：2014-09-10

Applicant: Tokyo Electron Limited

Inventor： Takayuki ISHII

IPC: B05B12/02 ,  B05B3/18 ,  B05B1/04

CPC classification number: H01L21/67253 ,  B05C5/0254 ,  B05C11/1013 ,  B05C11/1047 ,  H01L21/6715

Abstract: A coating apparatus includes: a slit nozzle that discharges a coating material from a discharge port in a slit shape; a moving mechanism that relatively moves the slit nozzle with respect to a substrate in a disk shape; and a control unit that controls the moving mechanism, wherein the control unit performs a first constant speed coating treatment of relatively moving the slit nozzle with respect to the substrate at a first speed, then an acceleration coating treatment of accelerating a relative moving speed of the slit nozzle with respect to the substrate to a second speed higher than the first speed, and then a second constant speed coating treatment of relatively moving the slit nozzle with respect to the substrate at the second speed.

Abstract translation: 涂布装置包括：狭缝喷嘴，其以狭缝形状从排出口排出涂料; 将狭缝喷嘴相对于盘状的基板相对移动的移动机构; 以及控制单元，其控制所述移动机构，其中，所述控制单元以第一速度进行相对于所述基板相对移动所述狭缝喷嘴的第一恒速涂布处理，然后进行加速涂布处理，以加速所述移动机构的相对移动速度 相对于基板的狭缝喷嘴至高于第一速度的第二速度，然后以第二速度相对于基板相对移动狭缝喷嘴的第二恒速涂覆处理。

公开(公告)号：US20200168468A1

公开(公告)日：2020-05-28

申请号：US16693609

申请日：2019-11-25

Applicant: Tokyo Electron Limited

Inventor： Takayuki ISHII ,  Taichi OKANO ,  Sho OIKAWA

IPC: H01L21/3065 ,  H01L21/263 ,  H01L21/308 ,  H01L21/67

Abstract: An etching method is provided. In the method, a substrate including an etching target film, a hard mask containing silicon and a patterned resist is provided. A protective film is formed on a surface of the substrate by generating a first plasma from one of a first gas containing carbon, fluorine and a dilute gas, and a second gas containing carbon, hydrogen and the dilute gas. The hard mask is etched by generating a second plasma from a third gas after performing the step of forming the protective film.

公开(公告)号：US20150004795A1

公开(公告)日：2015-01-01

申请号：US14316082

申请日：2014-06-26

Applicant: Tokyo Electron Limited

Inventor： Takayuki ISHII

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139

Abstract: A groove shape can be improved. A plasma etching method includes plasma-processing a photoresist film that is formed on a mask film and has a preset pattern; exposing an organic film formed under the mask film by etching the mask film with the pattern of the plasma-processed photoresist film; and etching the organic film by plasma of a mixture gas containing O2 (oxygen), COS (carbonyl sulfate) and Cl2 (chlorine).

Abstract translation: 可以改善凹槽形状。 等离子体蚀刻方法包括等离子体处理形成在掩模膜上并具有预设图案的光致抗蚀剂膜; 通过用等离子体处理的光致抗蚀剂膜的图案蚀刻掩模膜来暴露在掩模膜下形成的有机膜; 并通过含有O 2（氧），COS（羰基硫酸盐）和Cl 2（氯）的混合气体的等离子体蚀刻有机膜。

公开(公告)号：US20220062943A1

公开(公告)日：2022-03-03

申请号：US17458691

申请日：2021-08-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki ISHII ,  Kazuya NAGASEKI ,  Michishige SAITO

IPC: B05C5/02 ,  B05C11/10 ,  B05C17/005

Abstract: A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

公开(公告)号：US20210391153A1

公开(公告)日：2021-12-16

申请号：US17337696

申请日：2021-06-03

Applicant: Tokyo Electron Limited

Inventor： Takayuki ISHII ,  Kazuya NAGASEKI ,  Michishige SAITO

IPC: H01J37/32 ,  H01L21/687

Abstract: A stage includes a first member made of a material having a density of 5.0 g/cm3 or less, and a second member joined to the first member. The second member is made of a material having a linear expansion coefficient of 5.0×10−6/K or less and a thermal conductivity of 100 W/mK or more. A flow passage for a temperature control medium is formed in at least one of the first member and the second member.