公开(公告)号：US20230245882A1

公开(公告)日：2023-08-03

申请号：US18161298

申请日：2023-01-30

Applicant: Tokyo Electron Limited

Inventor： Yosuke WATANABE ,  Ryoun SHIMAMOTO ,  Shota CHIDA

IPC: H01L21/02 ,  H01L21/67 ,  C23C28/04

CPC classification number: H01L21/02271 ,  H01L21/02115 ,  H01L21/67098 ,  H01L21/02205 ,  C23C28/04 ,  H01L21/02304

Abstract: A deposition method includes: forming a seed layer on a substrate; and forming a carbon film on the seed layer. The forming the seed layer includes: supplying an aminosilane-based gas to the substrate to form a Si—H bond on a surface of the substrate; and supplying a boron-containing gas to the substrate to form a B—H bond on the surface on which the Si—H bond is formed.

公开(公告)号：US20220068637A1

公开(公告)日：2022-03-03

申请号：US17310258

申请日：2019-10-28

Applicant: Tokyo Electron Limited

Inventor： Kotaro MIYATANI ,  Naotaka NORO ,  Kouji SHIMOMURA ,  Ryoun SHIMAMOTO ,  Toshiyuki IKEUCHI ,  Younggi HONG

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455

Abstract: A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.