公开(公告)号：US12253838B2

公开(公告)日：2025-03-18

申请号：US17584712

申请日：2022-01-26

Applicant: Tokyo Electron Limited

Inventor： Yuto Noda ,  Shota Yamazaki ,  Yuichi Takenaga ,  Toshiyuki Fukumoto

IPC: G05B13/04 ,  G05B13/02 ,  G05B23/02

Abstract: An information processing device includes: a machine learning model selection part configured to select a machine learning model appropriate for a data set used for learning of the machine learning model; a calculation part configured to perform an optimization calculation by using the selected machine learning model to calculate process conditions that can achieve a target process result, predicted values of a process result corresponding to each of the process conditions, and reliability of the predicted values; a process condition selection part configured to select, among the process conditions that can achieve the target process result, one or more process conditions according to the predicted values of the process result and the reliability of the predicted values; and a display controller configured to display the selected process conditions, the predicted values of the process result corresponding to each of the selected process conditions, and the reliability of the predicted values.

公开(公告)号：US12020914B2

公开(公告)日：2024-06-25

申请号：US17075869

申请日：2020-10-21

Applicant: Tokyo Electron Limited

Inventor： Shota Yamazaki ,  Yuichi Takenaga

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52 ,  G05B19/41 ,  G05B19/4155 ,  H01L21/67

CPC classification number: H01J37/32926 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  G05B19/4155 ,  H01L21/67253 ,  G05B2219/45031 ,  H01J2237/332

Abstract: An information processing device includes a storage configured to store a first film thickness model or a first refractive index model defining an amount of change in a film thickness or a refractive index at each position of a first wafer when a film forming processing is performed by changing an output of each of a plurality of plasma sources provided in a film forming device by a predetermined amount and a calculator configured to calculate, based on the first film thickness model or the first refractive index model, a correction value of the output of each of the plurality of plasma sources to achieve a target value of a film thickness or a target value of a refractive index at each position of a second wafer.