公开(公告)号：US20220319860A1

公开(公告)日：2022-10-06

申请号：US17707316

申请日：2022-03-29

Applicant: Tokyo Electron Limited

Inventor： Akira NAKAGAWA ,  Takumi WATANABE ,  Akira TANABE ,  Mizuki MATSUO ,  Torai IWASA

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: An etching method of a substrate includes (a) providing a substrate on a substrate support inside a chamber, the substrate including a first region having a multilayer film in which a silicon oxide film and a silicon nitride film are alternately stacked and a second region having a monolayer silicon oxide film; and (b) etching the substrate with plasma generated from a first processing gas that includes a hydrofluorocarbon gas, wherein the hydrofluorocarbon gas includes a first hydrofluorocarbon gas represented by CxHyFz (x represents an integer of 2 or more, and y and z represent an integer of 1 or more) and having an unsaturated bond.