公开(公告)号：US20150255305A1

公开(公告)日：2015-09-10

申请号：US14638393

申请日：2015-03-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira NAKAGAWA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01J37/32027 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32146 ,  H01J37/32449 ,  H01J37/32697 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/76802

Abstract: In a plasma etching method for forming a hole in an etching target film, a process of generating a plasma of a processing gas containing at least CxFy gas and a rare gas having a mass smaller than a mass of Ar gas into the processing chamber in the processing chamber by switching on a high frequency power application unit under a first condition and a process of extinguishing the plasma of the processing gas in the processing chamber by switching off the high frequency power application unit under a second condition are alternately repeated. A negative DC voltage from a DC power supply is applied such that an absolute value of the negative DC voltage of the second condition becomes greater than an absolute value of the negative DC voltage of the first condition.

Abstract translation: 在用于在蚀刻靶膜中形成孔的等离子体蚀刻方法中，生成含有至少CxFy气体的处理气体的等离子体和质量小于Ar气体质量的稀有气体的处理进入处理室 交替地重复在第一条件下接通高频电源应用单元并且通过在第二条件下关闭高频电力应用单元来消除处理室中的处理气体的等离子体的处理。 施加来自直流电源的负直流电压，使得第二条件的负直流电压的绝对值变得大于第一条件的负直流电压的绝对值。

公开(公告)号：US20220319860A1

公开(公告)日：2022-10-06

申请号：US17707316

申请日：2022-03-29

Applicant: Tokyo Electron Limited

Inventor： Akira NAKAGAWA ,  Takumi WATANABE ,  Akira TANABE ,  Mizuki MATSUO ,  Torai IWASA

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: An etching method of a substrate includes (a) providing a substrate on a substrate support inside a chamber, the substrate including a first region having a multilayer film in which a silicon oxide film and a silicon nitride film are alternately stacked and a second region having a monolayer silicon oxide film; and (b) etching the substrate with plasma generated from a first processing gas that includes a hydrofluorocarbon gas, wherein the hydrofluorocarbon gas includes a first hydrofluorocarbon gas represented by CxHyFz (x represents an integer of 2 or more, and y and z represent an integer of 1 or more) and having an unsaturated bond.

公开(公告)号：US20240038501A1

公开(公告)日：2024-02-01

申请号：US18380066

申请日：2023-10-13

Applicant: Tokyo Electron Limited

Inventor： Akira NAKAGAWA ,  Kenji KOMATSU ,  Kazuma KAMIMURA ,  Tsukasa HIRAYAMA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32449 ,  H01L21/3065 ,  H01L21/67069 ,  H01J37/32357 ,  H01L21/6831 ,  H01J2237/334

Abstract: A substrate etching method performed by using a plasma processing apparatus includes: providing a substrate including a silicon-containing film to a substrate support; periodically supplying, to the substrate support, bias RF power of 20 kW to 50 kW at a duty ratio of 5% to 50%; and etching the silicon-containing film by plasma generated from a processing gas containing a fluorocarbon gas and an oxygen-containing gas