公开(公告)号：US20240030003A1

公开(公告)日：2024-01-25

申请号：US18351172

申请日：2023-07-12

Applicant: Tokyo Electron Limited

Inventor： Torai IWASA ,  Takehiro TANIKAWA ,  Masaya HERAI ,  Kazuki OSHIMA ,  Yuzuru SAKAI

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32568 ,  H01J2237/334 ,  H01J37/32091

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode disposed above the substrate support, a first RF signal generator coupled to the lower electrode and configured to generate a first RF signal, the first RF signal having a first power level during a first state in a repetition period, a second power level less than the first power level during a second state in the repetition period, and the second power level during a third state in the repetition period, and a second RF signal generator coupled to the lower electrode and configured to generate a second RF signal, the second RF signal having a third power level during the first state, a fourth power level greater than the third power level during the second state, and the third power level.

公开(公告)号：US20230187183A1

公开(公告)日：2023-06-15

申请号：US18073185

申请日：2022-12-01

Applicant: Tokyo Electron Limited

Inventor： Torai IWASA ,  Masaya HERAI ,  Takahiro SENDA

IPC: H01J37/32

CPC classification number: H01J37/3255 ,  H01J37/32715

Abstract: An upper electrode disclosed configures a shower head in a capacitively-coupled plasma processing apparatus. The upper electrode includes a first member and a first member. The first member includes a conductor. The first member provides a plurality of first holes. The plurality of first holes penetrate the first member. The second member includes a main body and a cover layer. The main body includes a conductor and is provided above the first member. The cover layer covers the surface of the main body. The second member provides one or more second holes. The secondary electron emission coefficient of the cover layer is smaller than 1.

公开(公告)号：US20220319860A1

公开(公告)日：2022-10-06

申请号：US17707316

申请日：2022-03-29

Applicant: Tokyo Electron Limited

Inventor： Akira NAKAGAWA ,  Takumi WATANABE ,  Akira TANABE ,  Mizuki MATSUO ,  Torai IWASA

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: An etching method of a substrate includes (a) providing a substrate on a substrate support inside a chamber, the substrate including a first region having a multilayer film in which a silicon oxide film and a silicon nitride film are alternately stacked and a second region having a monolayer silicon oxide film; and (b) etching the substrate with plasma generated from a first processing gas that includes a hydrofluorocarbon gas, wherein the hydrofluorocarbon gas includes a first hydrofluorocarbon gas represented by CxHyFz (x represents an integer of 2 or more, and y and z represent an integer of 1 or more) and having an unsaturated bond.