公开(公告)号：US20230238247A1

公开(公告)日：2023-07-27

申请号：US18096032

申请日：2023-01-12

Applicant: Tokyo Electron Limited

Inventor： Mizuki MATSUO

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32449 ,  H01L21/31144 ,  H01J37/32174 ,  H01J2237/334

Abstract: An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate including a silicon-containing film and a mask on the silicon-containing film. The silicon-containing film including a first region and a second region having a boundary therebetween as viewed in cross section in a direction perpendicular to a plane direction of the substrate. The boundary includes a slope extending in a direction inclined with respect to the plane direction. The method further includes (b) etching, after (a), the first region with first plasma generated from a first process gas to form a recess, (c) supplying, after (b), second plasma generated from a second process gas containing tungsten to the substrate, and (d) etching, after (c), the recess with third plasma generated from a third process gas. The recess crosses the slope in the cross section after (d).

公开(公告)号：US20230238250A1

公开(公告)日：2023-07-27

申请号：US18096035

申请日：2023-01-12

Applicant: Tokyo Electron Limited

Inventor： Mizuki MATSUO

IPC: H01L21/3205 ,  H01J37/32 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/32051 ,  H01J37/32449 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/02063 ,  H01J2237/334 ,  H01J37/32082 ,  H01J37/32816

Abstract: An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate, the substrate including a silicon-containing film and a mask on the silicon-containing film; (b) etching the silicon-containing film with a first plasma to form a recess, the first plasma generated from a first process gas; (c) supplying a second plasma to the substrate, the second plasma generated from a second process gas comprising tungsten; and (d) etching the recess with a third plasma generated from a third process gas.

公开(公告)号：US20220319860A1

公开(公告)日：2022-10-06

申请号：US17707316

申请日：2022-03-29

Applicant: Tokyo Electron Limited

Inventor： Akira NAKAGAWA ,  Takumi WATANABE ,  Akira TANABE ,  Mizuki MATSUO ,  Torai IWASA

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: An etching method of a substrate includes (a) providing a substrate on a substrate support inside a chamber, the substrate including a first region having a multilayer film in which a silicon oxide film and a silicon nitride film are alternately stacked and a second region having a monolayer silicon oxide film; and (b) etching the substrate with plasma generated from a first processing gas that includes a hydrofluorocarbon gas, wherein the hydrofluorocarbon gas includes a first hydrofluorocarbon gas represented by CxHyFz (x represents an integer of 2 or more, and y and z represent an integer of 1 or more) and having an unsaturated bond.