公开(公告)号：US11501998B2

公开(公告)日：2022-11-15

申请号：US16996914

申请日：2020-08-19

Applicant: Tokyo Electron Limited

Inventor： Kazuo Kibi ,  Akihiro Takahashi ,  Wataru Sakamoto

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/11556 ,  H01L27/11582

Abstract: There is formed, on a stack formed by alternately stacking an oxide film and a nitride film or an oxide film and a polysilicon film on a substrate, a hard mask in which two or more kinds of lines made of mutually different materials are arranged in order. Then, a photoresist is applied onto the hard mask. Furthermore, the photoresist is trimmed until one line is exposed from the end of the hard mask. Moreover, one line of the hard mask exposed beneath the photoresist is etched. Furthermore, a part of the stack exposed beneath the hard mask is etched. The etching of the photoresist, the hard mask, and the stack is repeated while changing etching conditions.

公开(公告)号：US20210233775A1

公开(公告)日：2021-07-29

申请号：US17149067

申请日：2021-01-14

Applicant: Tokyo Electron Limited

Inventor： Du Zhang ,  Manabu Iwata ,  Yu-Hao Tsai ,  Takahiro Yokoyama ,  Yanxiang Shi ,  Yoshihide Kihara ,  Wataru Sakamoto ,  Mingmei Wang

IPC: H01L21/311

Abstract: A method of high-throughput dry etching of silicon oxide and silicon nitride materials by in-situ autocatalyst formation. The method includes providing a substrate having a film thereon in a process chamber, the film containing silicon oxide, silicon nitride, or both silicon oxide and silicon nitride, introducing an etching gas containing fluorine and hydrogen, and setting a gas pressure in the process chamber that is between about 1 mTorr and about 300 mTorr, and a substrate temperature that is below about −30° C. The method further includes plasma-exciting the etching gas, and exposing the film to the plasma-excited etching gas, where the film is continuously etched during the exposing.