公开(公告)号：US20240307925A1

公开(公告)日：2024-09-19

申请号：US18459913

申请日：2022-02-17

Applicant: Tokyo Electron Limited

Inventor： Yoshitomo Sato ,  Osamu Miyahara

IPC: B08B1/12 ,  B08B3/02

CPC classification number: B08B1/12 ,  B08B3/02

Abstract: A substrate processing method includes etching a film formed on a rear surface of a substrate opposite to a main surface of the substrate and polishing the rear surface of the substrate after the etching of the film. In the etching of the film, a film formed on a rear surface of a substrate opposite to a main surface of the substrate is etched. In the polishing of the rear surface, the rear surface of the substrate is polished after the etching.

公开(公告)号：US20240004301A1

公开(公告)日：2024-01-04

申请号：US18318041

申请日：2023-05-16

Applicant: Tokyo Electron Limited

Inventor： Yoshitomo Sato

IPC: G03F7/30 ,  C23C16/54 ,  C23C16/02

CPC classification number: G03F7/305 ,  C23C16/0227 ,  C23C16/54

Abstract: A substrate processing apparatus includes a film processing unit configured to perform a preset processing including formation of a resist film on a front surface of a substrate; and a carry-in/out unit configured to perform a carry-in/carry-out of the substrate into/from the film processing unit. The film processing unit includes a resist film forming unit configured to form the resist film on the front surface of the substrate; a film removing unit configured to supply, to a rear surface film formed on a rear surface of the substrate opposite to the front surface, a processing liquid configured to remove the rear surface film; and a foreign substance removing unit configured to move a brush along the rear surface of the substrate, while keeping the brush in contact with the rear surface of the substrate after being processed by the film removing unit.

公开(公告)号：US09082614B1

公开(公告)日：2015-07-14

申请号：US14682268

申请日：2015-04-09

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Yoshitomo Sato ,  Kazuyuki Tashiro ,  Naofumi Kishita

IPC: H01L21/31 ,  H01L21/02

CPC classification number: H01L21/02282 ,  H01L21/6715

Abstract: There is provided a periphery coating method of coating a coating liquid on a periphery region of a substrate. The method includes performing a scan-in process of moving the coating liquid nozzle from an outside of an edge of the substrate to a position above the periphery region of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle; and performing a scan-out process of moving the coating liquid nozzle from the position above the periphery region of the substrate to the outside of the edge of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle. Further, in the scan-out process, the coating liquid nozzle is moved at a speed lower than a speed at which the coating liquid is moved to a side of an edge of the substrate.

Abstract translation: 提供了在基板的周边区域上涂布涂布液的周边涂布方法。 该方法包括：在旋转基板并从涂布液喷嘴排出涂布液的同时，将涂布液喷嘴从基板的边缘的外侧移动到基板的周边区域以上的位置的扫描过程; 并且在旋转基板并从涂布液喷嘴排出涂布液的同时执行将涂布液喷嘴从基板的周边区域上方的位置移动到基板的边缘的外部的扫描处理。 此外，在扫描过程中，涂布液喷嘴以比涂布液移动到基板的边缘侧的速度低的速度移动。

公开(公告)号：US20190057890A1

公开(公告)日：2019-02-21

申请号：US16101642

申请日：2018-08-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshitomo Sato

IPC: H01L21/67 ,  G06T7/62

Abstract: A substrate processing apparatus according to an embodiment includes a cassette placing section, a processing unit, a transfer area, and an image capturing unit. On the cassette placing section, a cassette accommodating a plurality of substrates is placed. The processing unit washes or etches a peripheral portion of each substrate taken out from the cassette. The transfer area is interposed between the cassette placing section and the processing unit, and the substrate is transferred therein. The image capturing unit is disposed in the transfer area to capture an image of the substrate processed by the processing unit. The image includes both of (i) a peripheral portion of an upper surface or a lower surface of the substrate and (ii) an end face of the substrate.

公开(公告)号：US09027508B2

公开(公告)日：2015-05-12

申请号：US14095054

申请日：2013-12-03

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Yoshitomo Sato ,  Kazuyuki Tashiro ,  Naofumi Kishita

IPC: B05C11/00 ,  H01L21/67

CPC classification number: H01L21/02282 ,  H01L21/6715

Abstract: A periphery coating unit performs a scan-in process of moving a resist liquid nozzle 27 from an outside of an edge Wb of a wafer W to a position above a periphery region Wc of the wafer W while rotating the wafer W and discharging a resist liquid from the resist liquid nozzle 27; and a scan-out process of moving the resist liquid nozzle 27 from the position above the periphery region Wc of the wafer W to the outside of the edge Wb of the wafer W while rotating the wafer W and discharging the resist liquid from the resist liquid nozzle 27. Further, in the scan-out process, the resist liquid nozzle 27 is moved at a speed v2 lower than a speed v3 at which the resist liquid is moved to a side of the edge Wb of the wafer W.

Abstract translation: 周边涂布单元执行扫描过程，其将抗蚀剂液体喷嘴27从晶片W的边缘Wb的外侧移动到晶片W的周边区域Wc上方的位置，同时旋转晶片W并且将抗蚀剂液体 来自抗蚀液喷嘴27; 以及扫描输出处理，其将抗蚀剂液体喷嘴27从晶片W的周边区域Wc上方的位置移动到晶片W的边缘Wb的外侧，同时旋转晶片W并从抗蚀剂液体排出抗蚀剂液体 此外，在扫描输出处理中，抗蚀剂液体喷嘴27以比抗蚀剂液体移动到晶片W的边缘Wb侧的速度v3的速度V2移动。

公开(公告)号：US11094569B2

公开(公告)日：2021-08-17

申请号：US16101642

申请日：2018-08-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshitomo Sato

IPC: H01L21/67 ,  H01L21/68 ,  G06T7/62 ,  G06T7/00

Abstract: A substrate processing apparatus according to an embodiment includes a cassette placing section, a processing unit, a transfer area, and an image capturing unit. On the cassette placing section, a cassette accommodating a plurality of substrates is placed. The processing unit washes or etches a peripheral portion of each substrate taken out from the cassette. The transfer area is interposed between the cassette placing section and the processing unit, and the substrate is transferred therein. The image capturing unit is disposed in the transfer area to capture an image of the substrate processed by the processing unit. The image includes both of (i) a peripheral portion of an upper surface or a lower surface of the substrate and (ii) an end face of the substrate.

公开(公告)号：US20150214046A1

公开(公告)日：2015-07-30

申请号：US14682268

申请日：2015-04-09

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Yoshitomo Sato ,  Kazuyuki Tashiro ,  Naofumi Kishita

IPC: H01L21/02

CPC classification number: H01L21/02282 ,  H01L21/6715

Abstract: There is provided a periphery coating method of coating a coating liquid on a periphery region of a substrate. The method includes performing a scan-in process of moving the coating liquid nozzle from an outside of an edge of the substrate to a position above the periphery region of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle; and performing a scan-out process of moving the coating liquid nozzle from the position above the periphery region of the substrate to the outside of the edge of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle. Further, in the scan-out process, the coating liquid nozzle is moved at a speed lower than a speed at which the coating liquid is moved to a side of an edge of the substrate.

Abstract translation: 提供了在基板的周边区域上涂布涂布液的周边涂布方法。 该方法包括：在旋转基板并从涂布液喷嘴排出涂布液的同时，将涂布液喷嘴从基板的边缘的外侧移动到基板的周边区域以上的位置的扫描过程; 并且在旋转基板并从涂布液喷嘴排出涂布液的同时执行将涂布液喷嘴从基板的周边区域上方的位置移动到基板的边缘的外部的扫描处理。 此外，在扫描过程中，涂布液喷嘴以比涂布液移动到基板的边缘侧的速度低的速度移动。

公开(公告)号：US20140154890A1

公开(公告)日：2014-06-05

申请号：US14095054

申请日：2013-12-03

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Yoshitomo Sato ,  Kazuyuki Tashiro ,  Naofumi Kishita

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02282 ,  H01L21/6715

Abstract: A periphery coating unit performs a scan-in process of moving a resist liquid nozzle 27 from an outside of an edge Wb of a wafer W to a position above a periphery region Wc of the wafer W while rotating the wafer W and discharging a resist liquid from the resist liquid nozzle 27; and a scan-out process of moving the resist liquid nozzle 27 from the position above the periphery region Wc of the wafer W to the outside of the edge Wb of the wafer W while rotating the wafer W and discharging the resist liquid from the resist liquid nozzle 27. Further, in the scan-out process, the resist liquid nozzle 27 is moved at a speed v2 lower than a speed v3 at which the resist liquid is moved to a side of the edge Wb of the wafer W.

Abstract translation: 周边涂布单元执行扫描过程，其将抗蚀剂液体喷嘴27从晶片W的边缘Wb的外侧移动到晶片W的周边区域Wc上方的位置，同时旋转晶片W并且将抗蚀剂液体 来自抗蚀液喷嘴27; 以及扫描输出处理，其将抗蚀剂液体喷嘴27从晶片W的周边区域Wc上方的位置移动到晶片W的边缘Wb的外侧，同时旋转晶片W并从抗蚀剂液体排出抗蚀剂液体 此外，在扫描输出处理中，抗蚀剂液体喷嘴27以比抗蚀剂液体移动到晶片W的边缘Wb侧的速度v3的速度V2移动。