公开(公告)号：US10048664B2

公开(公告)日：2018-08-14

申请号：US14963802

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi Hasimoto ,  Shinichi Hatakeyama ,  Naoki Shibata ,  Kousuke Yoshihara ,  Minoru Kubota ,  Hiroyuki Ide

IPC: B05C5/00 ,  G05B15/02 ,  H01L21/02 ,  B05C13/02 ,  B05B1/00 ,  B05D1/00 ,  G03F7/16 ,  H01L21/67 ,  B05D3/04 ,  B05D3/10

Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).

公开(公告)号：US09027508B2

公开(公告)日：2015-05-12

申请号：US14095054

申请日：2013-12-03

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Yoshitomo Sato ,  Kazuyuki Tashiro ,  Naofumi Kishita

IPC: B05C11/00 ,  H01L21/67

CPC classification number: H01L21/02282 ,  H01L21/6715

Abstract: A periphery coating unit performs a scan-in process of moving a resist liquid nozzle 27 from an outside of an edge Wb of a wafer W to a position above a periphery region Wc of the wafer W while rotating the wafer W and discharging a resist liquid from the resist liquid nozzle 27; and a scan-out process of moving the resist liquid nozzle 27 from the position above the periphery region Wc of the wafer W to the outside of the edge Wb of the wafer W while rotating the wafer W and discharging the resist liquid from the resist liquid nozzle 27. Further, in the scan-out process, the resist liquid nozzle 27 is moved at a speed v2 lower than a speed v3 at which the resist liquid is moved to a side of the edge Wb of the wafer W.

Abstract translation: 周边涂布单元执行扫描过程，其将抗蚀剂液体喷嘴27从晶片W的边缘Wb的外侧移动到晶片W的周边区域Wc上方的位置，同时旋转晶片W并且将抗蚀剂液体 来自抗蚀液喷嘴27; 以及扫描输出处理，其将抗蚀剂液体喷嘴27从晶片W的周边区域Wc上方的位置移动到晶片W的边缘Wb的外侧，同时旋转晶片W并从抗蚀剂液体排出抗蚀剂液体 此外，在扫描输出处理中，抗蚀剂液体喷嘴27以比抗蚀剂液体移动到晶片W的边缘Wb侧的速度v3的速度V2移动。

公开(公告)号：US12174549B2

公开(公告)日：2024-12-24

申请号：US18213785

申请日：2023-06-23

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Kunugimoto ,  Shota Ueyama ,  Akihiro Teramoto ,  Yuta Nishiyama ,  Shinichi Hatakeyama

IPC: G01F9/00 ,  B08B3/02 ,  B08B13/00 ,  G01G21/22 ,  G03F7/00 ,  G03F7/16

Abstract: A substrate processing system includes: a measuring unit provided detachably with respect to a placement portion of a placement stage; a measuring jig for measuring a processing liquid; a liquid processing unit including a supplier which supplies the processing liquid to the measuring jig; a transfer mechanism for transferring the measuring jig between the measuring unit and the liquid processing unit; and a controller. The controller executes: a process of transferring the measuring jig in the measuring unit from the measuring unit to the liquid processing unit; a process of ejecting the processing liquid from the supplier to the measuring jig; a third process of transferring the measuring jig from the liquid processing unit to the measuring unit; and a fourth process of calculating an ejection amount of the processing liquid based on a measurement value in the measuring unit.

公开(公告)号：US20180284616A1

公开(公告)日：2018-10-04

申请号：US15941298

申请日：2018-03-30

Applicant: Tokyo Electron Limited

Inventor： Shinichiro Kawakami ,  Hiroshi Mizunoura ,  Shinichi Hatakeyama

IPC: G03F7/32 ,  G03F7/42 ,  G03F7/30 ,  G03F7/11

CPC classification number: G03F7/32 ,  G03F7/11 ,  G03F7/3021 ,  G03F7/422 ,  G03F7/423

Abstract: A coating and developing apparatus 2 includes a first protection processing unit U01, a film forming unit U02, a first cleaning processing unit U03 and a control unit U08. The control unit U08 is configured to control the first protection processing unit U01 to form a first protective film on a peripheral portion Wc of a wafer W, control the film forming unit U02 to form a resist film on a front surface Wa of the wafer W, control the first cleaning processing unit U03 to supply a first cleaning liquid for removing the resist film to the peripheral portion Wc, control the first cleaning processing unit U03 to supply a second cleaning liquid for removing a metal component to the peripheral portion Wc, and control the first cleaning processing unit U03 to supply a third cleaning liquid for removing the first protective film PF1 to the peripheral portion Wc.

公开(公告)号：US09947534B2

公开(公告)日：2018-04-17

申请号：US14813820

申请日：2015-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke Yoshihara ,  Koji Takayanagi ,  Shinichi Hatakeyama ,  Kohei Kawakami

IPC: B05D3/12 ,  H01L21/033 ,  B05D1/00 ,  B05C11/02 ,  H01L21/67 ,  G03F7/16 ,  H01L21/027 ,  H01L51/00 ,  G06F19/00

CPC classification number: H01L21/0337 ,  B05C11/023 ,  B05D1/005 ,  G03F7/162 ,  G06F19/00 ,  H01L21/0271 ,  H01L21/6715 ,  H01L51/0003 ,  H01L2224/03418

Abstract: A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.

公开(公告)号：US11065639B2

公开(公告)日：2021-07-20

申请号：US16468356

申请日：2017-11-24

Applicant: Tokyo Electron Limited

Inventor： Shogo Inaba ,  Kosuke Yoshihara ,  Shinichi Hatakeyama

IPC: B05C11/08 ,  B05C5/02 ,  B05D1/36 ,  B05D3/12 ,  B05D1/00 ,  H01L21/027

Abstract: A method for coating a top of a substrate with a coating solution includes supplying, before a solution film of the coating solution formed on the substrate dries, a solvent for the coating solution to a peripheral portion on the solution film of the coating solution on the substrate while rotating the substrate at a predetermined rotation speed to form a mixed layer of the coating solution and the solvent at the peripheral portion. The method includes, then, controlling a film thickness of the coating solution after drying by rotating the substrate at a rotation speed higher than the predetermined rotation speed to push the mixed layer to an outer peripheral side.

公开(公告)号：US10295903B2

公开(公告)日：2019-05-21

申请号：US15682750

申请日：2017-08-22

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Masanobu Watanabe ,  Kouzo Nishi ,  Seiya Totsuka ,  Kentaro Yoshihara

IPC: G03F7/00 ,  G03F7/20 ,  H01L21/67 ,  G03F7/16

Abstract: A substrate processing apparatus according to the present disclosure includes: a nozzle that ejects a processing liquid to a wafer; a force-feeding unit that force-feeds the processing liquid to the nozzle side; a liquid feeding pipeline that includes first and second valves and guides the processing liquid from the force-feeding unit to the nozzle; and a controller. The controller is configured to perform opening the first valve in a state where the second valve is closed and a pressure between the first and second valves is higher than a pressure between the force-feeding unit and the first valve, controlling the force-feeding unit to increase the pressure between the first and second valves that has been decreased by the opening of the first valve, and opening the second valve after the pressure between the first and second valves is decreased by the opening of the first valve.

公开(公告)号：US09791778B2

公开(公告)日：2017-10-17

申请号：US14963831

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi Hasimoto ,  Shinichi Hatakeyama ,  Naoki Shibata

IPC: G03B27/32 ,  G03F7/16

CPC classification number: G03F7/16

Abstract: There are provided a liquid processing method, a liquid processing apparatus and a recording medium for liquid processing which can enhance the uniformity of the coating state of a processing liquid on a substrate. A coating unit includes a rotary holder for rotating a wafer, a nozzle for supplying a processing liquid onto a surface of the wafer, and a controller for controlling the position of the nozzle with respect to the wafer. A liquid processing method includes: starting the supply of the processing liquid to the surface of the wafer at an eccentric position at a distance from the center of rotation of the wafer, and moving the position on the wafer to which the processing liquid is supplied toward the center of rotation of the wafer while rotating the wafer at a first rotational speed; and, after the processing liquid supply position has reached the center of rotation of the wafer, rotating the wafer at a second rotational speed which is higher than the first rotational speed, thereby allowing the processing liquid to spread toward the periphery of the wafer.

公开(公告)号：US20150214046A1

公开(公告)日：2015-07-30

申请号：US14682268

申请日：2015-04-09

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Yoshitomo Sato ,  Kazuyuki Tashiro ,  Naofumi Kishita

IPC: H01L21/02

CPC classification number: H01L21/02282 ,  H01L21/6715

Abstract: There is provided a periphery coating method of coating a coating liquid on a periphery region of a substrate. The method includes performing a scan-in process of moving the coating liquid nozzle from an outside of an edge of the substrate to a position above the periphery region of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle; and performing a scan-out process of moving the coating liquid nozzle from the position above the periphery region of the substrate to the outside of the edge of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle. Further, in the scan-out process, the coating liquid nozzle is moved at a speed lower than a speed at which the coating liquid is moved to a side of an edge of the substrate.

Abstract translation: 提供了在基板的周边区域上涂布涂布液的周边涂布方法。 该方法包括：在旋转基板并从涂布液喷嘴排出涂布液的同时，将涂布液喷嘴从基板的边缘的外侧移动到基板的周边区域以上的位置的扫描过程; 并且在旋转基板并从涂布液喷嘴排出涂布液的同时执行将涂布液喷嘴从基板的周边区域上方的位置移动到基板的边缘的外部的扫描处理。 此外，在扫描过程中，涂布液喷嘴以比涂布液移动到基板的边缘侧的速度低的速度移动。

公开(公告)号：US20140154890A1

公开(公告)日：2014-06-05

申请号：US14095054

申请日：2013-12-03

Applicant: Tokyo Electron Limited

Inventor： Shinichi Hatakeyama ,  Yoshitomo Sato ,  Kazuyuki Tashiro ,  Naofumi Kishita

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02282 ,  H01L21/6715

Abstract: A periphery coating unit performs a scan-in process of moving a resist liquid nozzle 27 from an outside of an edge Wb of a wafer W to a position above a periphery region Wc of the wafer W while rotating the wafer W and discharging a resist liquid from the resist liquid nozzle 27; and a scan-out process of moving the resist liquid nozzle 27 from the position above the periphery region Wc of the wafer W to the outside of the edge Wb of the wafer W while rotating the wafer W and discharging the resist liquid from the resist liquid nozzle 27. Further, in the scan-out process, the resist liquid nozzle 27 is moved at a speed v2 lower than a speed v3 at which the resist liquid is moved to a side of the edge Wb of the wafer W.

Abstract translation: 周边涂布单元执行扫描过程，其将抗蚀剂液体喷嘴27从晶片W的边缘Wb的外侧移动到晶片W的周边区域Wc上方的位置，同时旋转晶片W并且将抗蚀剂液体 来自抗蚀液喷嘴27; 以及扫描输出处理，其将抗蚀剂液体喷嘴27从晶片W的周边区域Wc上方的位置移动到晶片W的边缘Wb的外侧，同时旋转晶片W并从抗蚀剂液体排出抗蚀剂液体 此外，在扫描输出处理中，抗蚀剂液体喷嘴27以比抗蚀剂液体移动到晶片W的边缘Wb侧的速度v3的速度V2移动。