公开(公告)号：US20190164785A1

公开(公告)日：2019-05-30

申请号：US16194818

申请日：2018-11-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yosuke KAWABUCHI

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/04

Abstract: There is provided a method of processing a substrate, which includes: forming a liquid film of an organic solvent on a front surface of the substrate; and drying the substrate with the liquid film formed thereon by heating the substrate in a state where a gas density around the substrate is larger than a gas density of air.

公开(公告)号：US20240429068A1

公开(公告)日：2024-12-26

申请号：US18690888

申请日：2022-08-31

Applicant: Tokyo Electron Limited

Inventor： Yosuke KAWABUCHI ,  Takahiro YASUTAKE ,  Tsunenaga NAKASHIMA

IPC: H01L21/67 ,  B08B5/02 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing apparatus includes: a processing container including a processing chamber; a holder configured to hold a substrate in the processing chamber; and a nozzle configured to jet a gas to irradiate a first main surface of the substrate with a gas cluster. The processing container includes an opposing wall including a first opposing surface facing the first main surface of the substrate, a plate provided on a portion of the first opposing surface, and a through-hole configured to pass through the opposing wall and the plate. The plate has a second opposing surface facing the first main surface. The through-hole is a passage of the gas and has an outlet on the second opposing surface. A first gap is formed between the opposing wall and the substrate. A second gap is formed between the plate and the substrate and is narrower than the first gap.

公开(公告)号：US20140080312A1

公开(公告)日：2014-03-20

申请号：US13910249

申请日：2013-06-05

Applicant: Tokyo Electron Limited ,  Sony Corporation

Inventor： Hayato IWAMOTO ,  Yoshiya HAGIMOTO ,  Tomoki TETSUKA ,  Shinichiro SHIMOMURA ,  Teruomi MINAMI ,  Hiroki SAKURAI ,  Hirotaka MARUYAMA ,  Yosuke KAWABUCHI ,  Hiroshi TANAKA

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02019 ,  H01L21/02052 ,  H01L21/30608 ,  H01L21/6708

Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

Abstract translation: 晶片被水平地保持并由基板保持机构旋转。 通过喷嘴将水性碱性溶液供给到晶片，并使其从晶片的中心部分流向周边边缘部分，从而蚀刻晶片。 预先将一定量的氧气等于或大于在流过晶片的碱性水溶液中所涉及的大气中的氧气的量，将其溶解在碱性水溶液中。