公开(公告)号：US20190076763A1

公开(公告)日：2019-03-14

申请号：US16117664

申请日：2018-08-30

Applicant: Tokyo Electron Limited

Inventor： Katsunori ICHINO ,  Tsunenaga NAKASHIMA ,  Hideo FUNAKOSHI ,  Nobuaki MATSUOKA ,  Masayuki KAJIWARA

IPC: B01D36/00 ,  B01D35/26 ,  B05C5/00 ,  B05C11/10 ,  G03F7/20

Abstract: A treatment solution supply apparatus to supply a treatment solution to a treatment solution discharge unit via a supply path that is provided with a filter configured to remove foreign substances in the treatment solution and a tubephragm pump to send the treatment solution, the supply path has an opening/closing valve on an upstream side of the tubephragm pump and the filter, and a suck-back valve on a downstream side of the tubephragm pump and the filter, and includes a control unit to control at least the tubephragm pump, the opening/closing valve, and the suck-back valve, wherein the control unit performs: a control of stopping sending of the treatment solution from the tubephragm pump; and a control of suspending discharge of the treatment solution from the treatment solution discharge unit by operation of the suck-back valve, and then closing the opening/closing valve to stop the discharge.

公开(公告)号：US20230063907A1

公开(公告)日：2023-03-02

申请号：US18048102

申请日：2022-10-20

Applicant: Tokyo Electron Limited

Inventor： Kyoko IKEDA ,  Kazuya DOBASHI ,  Tsunenaga NAKASHIMA ,  Kenji SEKIGUCHI ,  Shuuichi NISHIKIDO ,  Masato NAKAJO ,  Takahiro YASUTAKE

IPC: B08B5/02

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

公开(公告)号：US20130112224A1

公开(公告)日：2013-05-09

申请号：US13663846

申请日：2012-10-30

Applicant: Tokyo Electron Limited

Inventor： Masahiro NAKAHARADA ,  Yoji SAKATA ,  Akira MIYATA ,  Shinichi HAYASHI ,  Suguru ENOKIDA ,  Tsunenaga NAKASHIMA

IPC: B08B3/04

CPC classification number: H01L21/67051 ,  G03F7/70691 ,  H01L21/02043 ,  H01L21/67046 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67213 ,  H01L21/67225 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67706 ,  H01L21/67748 ,  H01L21/6875 ,  H01L22/20

Abstract: An interface station of a coating and developing treatment system has: a cleaning unit cleaning at least a rear surface of a wafer before the wafer is transferred into an exposure apparatus; an inspection unit inspecting the rear surface of the cleaned wafer whether the wafer is exposable, before it is transferred into the exposure apparatus; wafer transfer mechanisms including arms transferring the wafer between the units and a wafer transfer control part controlling operations of the wafer transfer mechanisms. When it is determined that a state of the wafer becomes an exposable state by re-cleaning in the cleaning unit as a result of the inspection, the wafer transfer control part controls the wafer transfer mechanisms to transfer the wafer again to the cleaning unit.

Abstract translation: 涂装和显影处理系统的界面站具有：在将晶片转移到曝光装置之前，清洁单元至少清洁晶片的后表面; 检查单元，在将其转印到曝光装置之前，检查清洁晶片的背面是否可曝光; 晶片传送机构包括在晶片传送机构之间转移晶片的晶片传送控制部件。 当通过检查结果确定晶片的状态通过重新清洁在清洁单元中时，晶片转移控制部分控制晶片传送机构将晶片再次传送到清洁单元。

公开(公告)号：US20240429068A1

公开(公告)日：2024-12-26

申请号：US18690888

申请日：2022-08-31

Applicant: Tokyo Electron Limited

Inventor： Yosuke KAWABUCHI ,  Takahiro YASUTAKE ,  Tsunenaga NAKASHIMA

IPC: H01L21/67 ,  B08B5/02 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing apparatus includes: a processing container including a processing chamber; a holder configured to hold a substrate in the processing chamber; and a nozzle configured to jet a gas to irradiate a first main surface of the substrate with a gas cluster. The processing container includes an opposing wall including a first opposing surface facing the first main surface of the substrate, a plate provided on a portion of the first opposing surface, and a through-hole configured to pass through the opposing wall and the plate. The plate has a second opposing surface facing the first main surface. The through-hole is a passage of the gas and has an outlet on the second opposing surface. A first gap is formed between the opposing wall and the substrate. A second gap is formed between the plate and the substrate and is narrower than the first gap.

公开(公告)号：US20220001426A1

公开(公告)日：2022-01-06

申请号：US17295971

申请日：2019-11-20

Applicant: Tokyo Electron Limited

Inventor： Kyoko IKEDA ,  Kazuya DOBASHI ,  Tsunenaga NAKASHIMA ,  Kenji SEKIGUCHI ,  Shuuichi NISHIKIDO ,  Masato NAKAJO ,  Takahiro YASUTAKE

IPC: B08B5/02

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

公开(公告)号：US20160372346A1

公开(公告)日：2016-12-22

申请号：US15252374

申请日：2016-08-31

Applicant: Tokyo Electron Limited

Inventor： Masahiro NAKAHARADA ,  Yoji SAKATA ,  Akira MIYATA ,  Shinichi HAYASHI ,  Suguru ENOKIDA ,  Tsunenaga NAKASHIMA

IPC: H01L21/67 ,  G03F7/20

CPC classification number: H01L21/67051 ,  G03F7/70691 ,  H01L21/02043 ,  H01L21/67046 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67213 ,  H01L21/67225 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67706 ,  H01L21/67748 ,  H01L21/6875 ,  H01L22/20

Abstract: An interface station of a coating and developing treatment system has: a cleaning unit cleaning at least a rear surface of a wafer before the wafer is transferred into an exposure apparatus; an inspection unit inspecting the rear surface of the cleaned wafer whether the wafer is exposable, before it is transferred into the exposure apparatus; wafer transfer mechanisms including arms transferring the wafer between the units and a wafer transfer control part controlling operations of the wafer transfer mechanisms. When it is determined that a state of the wafer becomes an exposable state by re-cleaning in the cleaning unit as a result of the inspection, the wafer transfer control part controls the wafer transfer mechanisms to transfer the wafer again to the cleaning unit.

公开(公告)号：US20160372345A1

公开(公告)日：2016-12-22

申请号：US15252422

申请日：2016-08-31

Applicant: Tokyo Electron Limited

Inventor： Masahiro NAKAHARADA ,  Yoji SAKATA ,  Akira MIYATA ,  Shinichi HAYASHI ,  Suguru ENOKIDA ,  Tsunenaga NAKASHIMA

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/66 ,  H01L21/677

CPC classification number: H01L21/67051 ,  G03F7/70691 ,  H01L21/02043 ,  H01L21/67046 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67213 ,  H01L21/67225 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67706 ,  H01L21/67748 ,  H01L21/6875 ,  H01L22/20

Abstract: An interface station of a coating and developing treatment system has: a cleaning unit cleaning at least a rear surface of a wafer before the wafer is transferred into an exposure apparatus; an inspection unit inspecting the rear surface of the cleaned wafer whether the wafer is exposable, before it is transferred into the exposure apparatus; wafer transfer mechanisms including arms transferring the wafer between the units and a wafer transfer control part controlling operations of the wafer transfer mechanisms. When it is determined that a state of the wafer becomes an exposable state by re-cleaning in the cleaning unit as a result of the inspection, the wafer transfer control part controls the wafer transfer mechanisms to transfer the wafer again to the cleaning unit.