公开(公告)号：US20220223408A1

公开(公告)日：2022-07-14

申请号：US17647032

申请日：2022-01-05

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Toru ISHII ,  Yuji SESHIMO ,  Yuichiro SASE

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  C23C16/458

Abstract: A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.

公开(公告)号：US20230230817A1

公开(公告)日：2023-07-20

申请号：US18153008

申请日：2023-01-11

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Yu WAMURA ,  Yuichiro SASE ,  Yuji SAWADA ,  Hiroyuki KIKUCHI

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/503

CPC classification number: H01J37/32724 ,  H01J37/3244 ,  H01J37/3211 ,  H01J37/32733 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/503 ,  H01J2237/20214 ,  H01J2237/3323 ,  H01J2237/024

Abstract: A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

公开(公告)号：US20210246550A1

公开(公告)日：2021-08-12

申请号：US17163889

申请日：2021-02-01

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Toru ISHII ,  Yuji SESHIMO ,  Yuichiro SASE

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

Abstract: A film deposition apparatus includes a rotary cable disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.