公开(公告)号：US12112947B2

公开(公告)日：2024-10-08

申请号：US17655247

申请日：2022-03-17

Applicant: Tokyo Electron Limited

Inventor： Tatsuya Miyahara ,  Daisuke Suzuki ,  Yoshihiro Takezawa ,  Yuki Tanabe

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/24 ,  C23C16/52 ,  C23C16/56

CPC classification number: H01L21/02667 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02645

Abstract: A method of crystallizing an amorphous silicon film includes depositing the amorphous silicon film on a seed layer formed over a substrate while heating the amorphous silicon film at a first temperature, and forming a crystal nucleus in an outer layer of the amorphous silicon film by causing migration of silicon in the outer layer by heating the amorphous silicon film at a second temperature higher than the first temperature.