公开(公告)号：US20240006168A1

公开(公告)日：2024-01-04

申请号：US18369219

申请日：2023-09-18

Applicant: Tokyo Electron Limited

Inventor： Satoshi OHUCHIDA ,  Koki MUKAIYAMA ,  Yusuke WAKO ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  B08B13/00 ,  B08B3/08

CPC classification number: H01J37/32724 ,  H01L21/0206 ,  H01L21/31138 ,  B08B5/00 ,  B08B13/00 ,  B08B3/08 ,  H01L21/31144 ,  H01J2237/334

Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.

公开(公告)号：US20230268191A1

公开(公告)日：2023-08-24

申请号：US18140694

申请日：2023-04-28

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Takatoshi ORUI ,  Kae KUMAGAI ,  Ryutaro SUDA ,  Satoshi OHUCHIDA ,  Yusuke WAKO ,  Yoshihide KIHARA

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01J37/32449 ,  H01J2237/3341

Abstract: An etching method includes (a) providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes (b) etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a hydrogen fluoride gas and a phosphorus-containing gas.

公开(公告)号：US20220238315A1

公开(公告)日：2022-07-28

申请号：US17583224

申请日：2022-01-25

Applicant: Tokyo Electron Limited

Inventor： Satoshi OHUCHIDA ,  Koki MUKAIYAMA ,  Yusuke WAKO ,  Maju TOMURA ,  Yoshihide KIHARA

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  B08B13/00 ,  B08B3/08

Abstract: A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.