公开(公告)号：US20230326762A1

公开(公告)日：2023-10-12

申请号：US18188758

申请日：2023-03-23

Applicant: Tokyo Electron Limited

Inventor： Masami OIKAWA ,  Yuya TAKAMURA

IPC: H01L21/3115 ,  C23C16/56 ,  C23C16/40

CPC classification number: H01L21/31155 ,  C23C16/56 ,  C23C16/401

Abstract: A substrate processing method includes: preparing a substrate having a target film on a surface; forming a barrier film that covers the target film; supplying a deuterium gas and an oxygen gas to the target film covered with the barrier film, thereby implanting deuterium into the target film; and removing the barrier film after the deuterium is implanted into the target film.

公开(公告)号：US20240170281A1

公开(公告)日：2024-05-23

申请号：US18505334

申请日：2023-11-09

Applicant: Tokyo Electron Limited

Inventor： Yuya TAKAMURA ,  Jun SATO

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/458 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  C23C16/4584 ,  C23C16/56 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32816 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0234 ,  H01J2237/2001 ,  H01J2237/20214 ,  H01J2237/332

Abstract: A deposition method includes: a) depositing a film of a reaction product of a first reaction gas and a second reaction gas that react with each other in the recess; and b) exposing the substrate on which the film is deposited to a plasma generated from a noble gas. a) includes: a1) exposing the substrate to a plasma generated from the noble gas and a modifying gas to adsorb a hydroxyl group on an inner surface of the recess in a predetermined distribution, a2) supplying the first reaction gas to the substrate on which the hydroxyl group is adsorbed, and a3) supplying the second reaction gas to the substrate on which the first reaction gas is adsorbed, thereby causing the first reaction gas to react with the second reaction gas to produce the reaction product.

公开(公告)号：US20210193455A1

公开(公告)日：2021-06-24

申请号：US17118874

申请日：2020-12-11

Applicant: Tokyo Electron Limited

Inventor： Masami OIKAWA ,  Yuya TAKAMURA

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

Abstract: A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.

公开(公告)号：US20230096299A1

公开(公告)日：2023-03-30

申请号：US17930459

申请日：2022-09-08

Applicant: Tokyo Electron Limited

Inventor： Yuya TAKAMURA ,  Masami OIKAWA

IPC: H01L21/67 ,  H01L21/324 ,  C23C16/40

Abstract: Disclosed is a substrate processing method for processing a substrate in a processing vessel. In the substrate processing method, the following steps (a) through (d) are performed together (a) heating the substrate to a set processing temperature, (b) supplying deuterium into the processing vessel, (c) supplying oxygen into the processing vessel, and (d) discharging the deuterium and the oxygen in the processing vessel so that a pressure inside the processing vessel becomes a set processing pressure.

公开(公告)号：US20220411933A1

公开(公告)日：2022-12-29

申请号：US17807506

申请日：2022-06-17

Applicant: Tokyo Electron Limited

Inventor： Yuya TAKAMURA

IPC: C23C16/455 ,  C23C16/458

Abstract: A film forming apparatus according to one aspect of the present disclosure includes a processing chamber, a gas supply pipe extending vertically in the processing chamber and including gas holes, and a boat configured to accommodate substrates including product substrates in a vertical direction in the processing chamber. The film forming apparatus forms a film on each of the substrates by use of gas supplied from the gas holes, each of the substrates corresponding to respective one or more of gas holes. The gas holes that are arranged in a height range in which the product substrates are situated include first gas holes that are opened at a same height, the first gas holes being oriented at respective angles such that respective imaginary lines passing through the first holes and a central axis of the gas supply pipe are at a same angle relative to an imaginary line.