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公开(公告)号：US20240175127A1
公开(公告)日：2024-05-30
申请号：US18513994
申请日：2023-11-20
Applicant: Tokyo Electron Limited
Inventor： Masami OIKAWA
IPC: C23C16/44
CPC classification number: C23C16/4412 , C23C16/4405
Abstract: A processing apparatus includes: a processing container configured to be depressurized; a film formation gas supply path configured to supply a film formation gas into the processing container; an exhaust pipe connected to the processing container and configured to exhaust the film formation gas in the processing container; a branch pipe branching from the exhaust pipe; and a diaphragm vacuum gauge connected to the branch pipe, wherein at least one of the exhaust pipe or the branch pipe has an inner surface where a material that promotes consumption of the film formation gas is exposed.
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公开(公告)号：US20230096299A1
公开(公告)日：2023-03-30
申请号：US17930459
申请日：2022-09-08
Applicant: Tokyo Electron Limited
Inventor： Yuya TAKAMURA , Masami OIKAWA
IPC: H01L21/67 , H01L21/324 , C23C16/40
Abstract: Disclosed is a substrate processing method for processing a substrate in a processing vessel. In the substrate processing method, the following steps (a) through (d) are performed together (a) heating the substrate to a set processing temperature, (b) supplying deuterium into the processing vessel, (c) supplying oxygen into the processing vessel, and (d) discharging the deuterium and the oxygen in the processing vessel so that a pressure inside the processing vessel becomes a set processing pressure.
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公开(公告)号：US20230047426A1
公开(公告)日：2023-02-16
申请号：US17973876
申请日：2022-10-26
Applicant: Tokyo Electron Limited
Inventor： Masami OIKAWA , Tomoya HASEGAWA , Koji SASAKI
Abstract: A cleaning method includes: supplying a cleaning gas in a processing container while continuously increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby executing a cleaning of the processing container by removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the executing the cleaning, for each pressure of the plurality of time points. The executing the cleaning is implemented when the time-dependent data of the concentration of the predetermined gas generated in the continuously increasing the pressure changes from an increasing state to a decreasing state after exceeding a threshold value.
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公开(公告)号：US20190228992A1
公开(公告)日：2019-07-25
申请号：US16251958
申请日：2019-01-18
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masami OIKAWA , Keisuke FUJITA
IPC: H01L21/67 , H01L21/673 , H01L21/3065
Abstract: There is provided a substrate processing method comprising etching a silicon film formed on a surface of a substrate accommodated in a processing container by supplying an etching gas to the substrate, purging the processing container by supplying a hydrogen-containing gas that reacts with the etching gas as a purge gas into the processing container, and forming an additional silicon film on the substrate.
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公开(公告)号：US20160265107A1
公开(公告)日：2016-09-15
申请号：US15055737
申请日：2016-02-29
Applicant: Tokyo Electron Limited
Inventor： Masami OIKAWA
IPC: C23C16/455 , C23C16/458 , C23C16/50 , H01L21/687
CPC classification number: C23C16/452 , C23C16/4411 , C23C16/45536 , C23C16/45578 , C23C16/4584 , C23C16/4585 , H01J37/32082 , H01J37/3244 , H01J37/32458 , H01J37/32715 , H01J37/32743 , H01L21/67303 , H01L21/67309
Abstract: A substrate holder holds a stack of substrates to be plasma-processed, and includes a ring-shaped part to be placed between adjacent substrates each of which includes a process surface to be plasma-processed and a non-process surface opposite from the process surface. The ring-shaped part includes a facing surface that faces the process surface of one of the adjacent substrates, and a protrusion formed along the outer periphery of the facing surface.
Abstract translation: 衬底保持器保持要等离子体处理的一叠衬底，并且包括要放置在相邻衬底之间的环形部件，每个衬底包括待等离子体处理的工艺表面和与工艺表面相对的非工艺表面 。 环状部分包括面向相邻基板之一的处理表面的面对表面和沿着相对表面的外周形成的突起。
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Patent Agency Ranking
公开(公告)号：US20230124143A1
公开(公告)日：2023-04-20
申请号：US17964554
申请日：2022-10-12
Applicant: Tokyo Electron Limited
Inventor： Tomoya HASEGAWA , Masaki KUROKAWA , Masami OIKAWA
Abstract: A processing apparatus includes: a processing container; a temperature sensor that detects a temperature therein; a gas supply unit that supplies a cleaning gas into the processing container; a pressure regulation unit that regulates a pressure in the processing container; and a control unit that controls the gas supply unit and the pressure regulation unit to perform a cleaning processing of removing a deposited film in the processing container. The control unit stores a vapor pressure curve in which the temperature in the processing container is associated with a vapor pressure of water in the processing container. In the cleaning processing, the control unit sets a target pressure below the vapor pressure curve based on the temperature detected by the temperature sensor and the vapor pressure curve, and controls the pressure regulation unit such that the pressure in the processing container becomes the target pressure.
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公开(公告)号：US20220062958A1
公开(公告)日：2022-03-03
申请号：US17411372
申请日：2021-08-25
Applicant: Tokyo Electron Limited
Inventor： Masami OIKAWA , Tomoya HASEGAWA , Koji SASAKI
Abstract: A cleaning method for removing a film deposited in a processing container includes: executing a cleaning of a processing container by supplying a cleaning gas to the processing container while increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the execution of the cleaning, for each pressure of the plurality of time points.
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公开(公告)号：US20210193455A1
公开(公告)日：2021-06-24
申请号：US17118874
申请日：2020-12-11
Applicant: Tokyo Electron Limited
Inventor： Masami OIKAWA , Yuya TAKAMURA
IPC: H01L21/02 , C23C16/455 , C23C16/34
Abstract: A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.
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公开(公告)号：US20210104421A1
公开(公告)日：2021-04-08
申请号：US17031785
申请日：2020-09-24
Applicant: Tokyo Electron Limited
Inventor： Masami OIKAWA , Tsubasa WATANABE , Tomoya HASEGAWA
Abstract: A control device controls an operation of a processing apparatus for performing a processing in a processing container that accommodates a substrate. The control device includes: a temperature acquisition unit configured to acquire a temperature inside the processing container; a storage unit configured to store relationship information indicating a relationship between the temperature inside the processing container and an etching rate, and film thickness information including a cumulative film thickness of a deposited film inside the processing container; a rate calculator configured to calculate an etching rate of the deposited film based on the temperature acquired by the temperature acquisition unit and the relationship information stored in the storage unit; and a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit.
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公开(公告)号：US20190309420A1
公开(公告)日：2019-10-10
申请号：US16371818
申请日：2019-04-01
Applicant: TOKYO ELECTRON LIMITED
Inventor： Masami OIKAWA , Ken ITABASHI , Satoshi TAKAGI , Masahisa WATANABE , Keisuke FUJITA , Tatsuya MIYAHARA , Hiroyuki HAYASHI
IPC: C23C16/455 , H01L21/673 , H01L21/02 , H01L21/311 , C23C16/52
Abstract: There is provided a substrate processing apparatus including: a processing container accommodating a boat on which a substrate is mounted; and an injector that extends in a vertical direction along an inner wall of the processing container in a vicinity of the processing container and has a plurality of gas holes in a longitudinal direction, wherein the plurality of gas holes is oriented toward the inner wall in the vicinity of the processing container.
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