PROCESSING APPARATUS AND PROCESSING METHOD
    1.
    发明公开

    公开(公告)号:US20240175127A1

    公开(公告)日:2024-05-30

    申请号:US18513994

    申请日:2023-11-20

    Inventor: Masami OIKAWA

    CPC classification number: C23C16/4412 C23C16/4405

    Abstract: A processing apparatus includes: a processing container configured to be depressurized; a film formation gas supply path configured to supply a film formation gas into the processing container; an exhaust pipe connected to the processing container and configured to exhaust the film formation gas in the processing container; a branch pipe branching from the exhaust pipe; and a diaphragm vacuum gauge connected to the branch pipe, wherein at least one of the exhaust pipe or the branch pipe has an inner surface where a material that promotes consumption of the film formation gas is exposed.

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20230096299A1

    公开(公告)日:2023-03-30

    申请号:US17930459

    申请日:2022-09-08

    Abstract: Disclosed is a substrate processing method for processing a substrate in a processing vessel. In the substrate processing method, the following steps (a) through (d) are performed together (a) heating the substrate to a set processing temperature, (b) supplying deuterium into the processing vessel, (c) supplying oxygen into the processing vessel, and (d) discharging the deuterium and the oxygen in the processing vessel so that a pressure inside the processing vessel becomes a set processing pressure.

    CLEANING METHOD AND PROCESSING APPARATUS

    公开(公告)号:US20230047426A1

    公开(公告)日:2023-02-16

    申请号:US17973876

    申请日:2022-10-26

    Abstract: A cleaning method includes: supplying a cleaning gas in a processing container while continuously increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby executing a cleaning of the processing container by removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the executing the cleaning, for each pressure of the plurality of time points. The executing the cleaning is implemented when the time-dependent data of the concentration of the predetermined gas generated in the continuously increasing the pressure changes from an increasing state to a decreasing state after exceeding a threshold value.

    PROCESSING APPARATUS AND CLEANING PROCESSING METHOD

    公开(公告)号:US20230124143A1

    公开(公告)日:2023-04-20

    申请号:US17964554

    申请日:2022-10-12

    Abstract: A processing apparatus includes: a processing container; a temperature sensor that detects a temperature therein; a gas supply unit that supplies a cleaning gas into the processing container; a pressure regulation unit that regulates a pressure in the processing container; and a control unit that controls the gas supply unit and the pressure regulation unit to perform a cleaning processing of removing a deposited film in the processing container. The control unit stores a vapor pressure curve in which the temperature in the processing container is associated with a vapor pressure of water in the processing container. In the cleaning processing, the control unit sets a target pressure below the vapor pressure curve based on the temperature detected by the temperature sensor and the vapor pressure curve, and controls the pressure regulation unit such that the pressure in the processing container becomes the target pressure.

    CLEANING METHOD AND PROCESSING APPARATUS

    公开(公告)号:US20220062958A1

    公开(公告)日:2022-03-03

    申请号:US17411372

    申请日:2021-08-25

    Abstract: A cleaning method for removing a film deposited in a processing container includes: executing a cleaning of a processing container by supplying a cleaning gas to the processing container while increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the execution of the cleaning, for each pressure of the plurality of time points.

    DEPOSITION METHOD
    8.
    发明申请

    公开(公告)号:US20210193455A1

    公开(公告)日:2021-06-24

    申请号:US17118874

    申请日:2020-12-11

    Abstract: A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.

    CONTROL DEVICE, PROCESSING APPARATUS, AND CONTROL METHOD

    公开(公告)号:US20210104421A1

    公开(公告)日:2021-04-08

    申请号:US17031785

    申请日:2020-09-24

    Abstract: A control device controls an operation of a processing apparatus for performing a processing in a processing container that accommodates a substrate. The control device includes: a temperature acquisition unit configured to acquire a temperature inside the processing container; a storage unit configured to store relationship information indicating a relationship between the temperature inside the processing container and an etching rate, and film thickness information including a cumulative film thickness of a deposited film inside the processing container; a rate calculator configured to calculate an etching rate of the deposited film based on the temperature acquired by the temperature acquisition unit and the relationship information stored in the storage unit; and a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit.

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