公开(公告)号：US20150124250A1

公开(公告)日：2015-05-07

申请号：US14530164

申请日：2014-10-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Junwei BAO ,  Ching-Ling MENG ,  Holger TUITJE ,  Mihail MIHAYLOV ,  Yan CHEN ,  Zheng YAN ,  Haixing ZOU ,  Hanyou CHU

IPC: G01J3/443 ,  G01N21/31

CPC classification number: G01J3/443 ,  G01N21/31 ,  G01N21/68 ,  G01N2201/10

Abstract: Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Abstract translation: 公开了一种用于测量半导体等离子体处理室中的等离子体的光发射的二维分布的方法，计算机方法，系统和装置。 所获得的等离子体光学发射的二维分布可以用于推断存在于等离子体中的某些化学物质的浓度的二维分布，并且因此为工艺开发提供了有用的工具，并为新的和改进的 加工工具开发。 所公开的技术在计算上是简单和便宜的，并且涉及将假设的光强度分布的扩展用于允许光强度的周向变化的基函数的总和。 合适的基函数的例子是泽尔尼克多项式。

公开(公告)号：US20240242987A1

公开(公告)日：2024-07-18

申请号：US18620541

申请日：2024-03-28

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yaowu MA ,  Zheng YAN ,  Basanta BHADURI

IPC: H01L21/67 ,  G01K1/02 ,  G01K11/00

CPC classification number: H01L21/67248 ,  G01K1/026 ,  G01K11/00 ,  H01L21/67086

Abstract: Aspects of the disclosure provide a wet etch semiconductor-processing system, which can include a wet processing bath configured to be filled with a processing liquid and configured for one or more semiconductor samples to be placed vertically in parallel therein and immersed in the processing liquid, and a sensor optically coupled to one of the semiconductor samples. The sensor can be configured to form an illumination beam, collect bandgap photoluminescence (PL) light excited by the illumination beam onto a surface of the semiconductor sample at an illuminated spot, and measure spectral intensities of the bandgap PL light in a vicinity of a semiconductor bandgap wavelength of the semiconductor sample. The sensor can be arranged with respect to the wet processing bath such that the sensor directs the illumination beam onto the surface of the semiconductor sample at the illuminated spot and receives the bandgap PL light from the illuminated spot.

公开(公告)号：US20230395408A1

公开(公告)日：2023-12-07

申请号：US18321432

申请日：2023-05-22

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yan SUN ,  Zheng YAN

IPC: H01L21/67 ,  G01N21/64

CPC classification number: H01L21/67248 ,  H01L21/67057 ,  G01N21/6489 ,  G01N2021/6471

Abstract: Aspects of the present disclosure provide a sensor for remote temperature measurement. For example, the sensor can include a light source configured to form an illumination beam, focusing optics configured to direct the illumination beam from the light source onto a semiconductor sample at an illuminated spot thereof, for exciting bandgap photoluminescence (PL) light in the semiconductor sample, collection optics configured to collect the bandgap PL light excited from the semiconductor sample, at least one optical detector configured to measure spectral intensities of the bandgap PL light in a vicinity of a semiconductor bandgap wavelength of the semiconductor sample, and transmission optics configured to transmit the bandgap PL light from the collection optics to the at least one optical detector.