METHOD OF DIFFUSING IMPURITY-DIFFUSING COMPONENT AND METHOD OF MANUFACTURING SOLAR CELL
    1.
    发明申请
    METHOD OF DIFFUSING IMPURITY-DIFFUSING COMPONENT AND METHOD OF MANUFACTURING SOLAR CELL 有权
    扩散成分分散体的制造方法及制造太阳能电池的方法

    公开(公告)号:US20140030839A1

    公开(公告)日:2014-01-30

    申请号:US13951121

    申请日:2013-07-25

    IPC分类号: H01L21/22 H01L31/18

    摘要: A method of diffusing an impurity-diffusing component including forming a first diffusing agent layer containing a first conductivity type impurity-diffusing component on the surface of a semiconductor substrate; calcining the first diffusing agent layer; forming a second diffusing agent layer containing a second conductivity type impurity-diffusing component on the surface of the semiconductor substrate excluding the region where the first diffusing agent layer is formed; and heating the semiconductor substrate at a temperature higher than the calcination temperature to diffuse the first and second conductivity type impurity-diffusing components to the semiconductor substrate.

    摘要翻译: 一种扩散杂质扩散组分的方法,包括在半导体衬底的表面上形成含有第一导电型杂质扩散组分的第一扩散剂层; 煅烧第一扩散剂层; 在除了形成第一扩散剂层的区域之外,在半导体衬底的表面上形成含有第二导电型杂质扩散组分的第二扩散剂层; 以及在高于煅烧温度的温度下加热半导体衬底,以将第一和第二导电类型的杂质扩散组分扩散到半导体衬底。

    Method of diffusing impurity-diffusing component and method of manufacturing solar cell
    3.
    发明授权
    Method of diffusing impurity-diffusing component and method of manufacturing solar cell 有权
    扩散杂质扩散组分的方法和制造太阳能电池的方法

    公开(公告)号:US09190276B2

    公开(公告)日:2015-11-17

    申请号:US13951121

    申请日:2013-07-25

    摘要: A method of diffusing an impurity-diffusing component including forming a first diffusing agent layer containing a first conductivity type impurity-diffusing component on the surface of a semiconductor substrate; calcining the first diffusing agent layer; forming a second diffusing agent layer containing a second conductivity type impurity-diffusing component on the surface of the semiconductor substrate excluding the region where the first diffusing agent layer is formed; and heating the semiconductor substrate at a temperature higher than the calcination temperature to diffuse the first and second conductivity type impurity-diffusing components to the semiconductor substrate.

    摘要翻译: 一种扩散杂质扩散组分的方法,包括在半导体衬底的表面上形成含有第一导电型杂质扩散组分的第一扩散剂层; 煅烧第一扩散剂层; 在除了形成第一扩散剂层的区域之外,在半导体衬底的表面上形成含有第二导电型杂质扩散组分的第二扩散剂层; 以及在高于煅烧温度的温度下加热半导体衬底,以将第一和第二导电类型的杂质扩散组分扩散到半导体衬底。