Surface treatment liquid and hydrophilic treatment method

    公开(公告)号:US11066531B2

    公开(公告)日:2021-07-20

    申请号:US16503772

    申请日:2019-07-05

    摘要: An object is to provide a surface treatment liquid which can firmly bond, while coating the surface of a treatment target with an extremely thin film, a coating whose hydrophilicity is unlikely to be lowered even when the coating is brought into contact with fats and the like to the surface of the treatment target and a surface treatment method using the surface treatment liquid described above. In a surface treatment liquid containing a resin (A) and a solvent (S), as the resin (A), a resin is used which includes a constituent unit (a1) that includes an organic group including a quaternary ammonium cation group and having a sulfonic acid anion group at a terminal and that is derived from an N-substituted (meth) acrylamide, and includes a reactive silyl group in at least one of molecular chain terminals, the concentration of the resin (A) in the surface treatment liquid is less than 2 mass % and the pH of the surface treatment liquid is 4 or less.

    METHOD OF DIFFUSING IMPURITY-DIFFUSING COMPONENT AND METHOD OF MANUFACTURING SOLAR CELL
    4.
    发明申请
    METHOD OF DIFFUSING IMPURITY-DIFFUSING COMPONENT AND METHOD OF MANUFACTURING SOLAR CELL 有权
    扩散成分分散体的制造方法及制造太阳能电池的方法

    公开(公告)号:US20140030839A1

    公开(公告)日:2014-01-30

    申请号:US13951121

    申请日:2013-07-25

    IPC分类号: H01L21/22 H01L31/18

    摘要: A method of diffusing an impurity-diffusing component including forming a first diffusing agent layer containing a first conductivity type impurity-diffusing component on the surface of a semiconductor substrate; calcining the first diffusing agent layer; forming a second diffusing agent layer containing a second conductivity type impurity-diffusing component on the surface of the semiconductor substrate excluding the region where the first diffusing agent layer is formed; and heating the semiconductor substrate at a temperature higher than the calcination temperature to diffuse the first and second conductivity type impurity-diffusing components to the semiconductor substrate.

    摘要翻译: 一种扩散杂质扩散组分的方法,包括在半导体衬底的表面上形成含有第一导电型杂质扩散组分的第一扩散剂层; 煅烧第一扩散剂层; 在除了形成第一扩散剂层的区域之外,在半导体衬底的表面上形成含有第二导电型杂质扩散组分的第二扩散剂层; 以及在高于煅烧温度的温度下加热半导体衬底,以将第一和第二导电类型的杂质扩散组分扩散到半导体衬底。

    Method for manufacturing flow path device

    公开(公告)号:US11167540B2

    公开(公告)日:2021-11-09

    申请号:US16864589

    申请日:2020-05-01

    IPC分类号: B32B38/00 B32B37/10

    摘要: A method for manufacturing a flow path device internally provided with a flow path for allowing a liquid to flow by compression bonding two or more members to each other, in which the hydrophilic property of a surface of the flow path can be maintained for a long period of time. A flow path device is manufactured by forming a hydrophilic coating film using a treatment liquid including a hydrophilizing agent in at least one member, the coating film covering a surface of the member at a side to be joined to another member, then irradiating only a joining surface of the coating film with ultraviolet rays or plasma derived from an oxygen-containing gas in the member having the coating film, and irradiating at least the joining surface with ultraviolet rays or plasma derived from an oxygen-containing gas in a member having no coating film, and compression bonding the two or more members.

    Resist composition and method for forming resist pattern

    公开(公告)号:US10241406B2

    公开(公告)日:2019-03-26

    申请号:US15629035

    申请日:2017-06-21

    摘要: A resist composition containing a resin component having a structural unit represented by general formula (a0-1), and a compound represented by general formula (b1). In general formula (a0-1), R is a hydrogen atom, an alkyl group, or a halogenated alkyl group. Va1 is a divalent hydrocarbon group. na1 represents an integer of 0 to 2. Ra′12 and Ra′13 are a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms or a hydrogen atom. Ra′14 is a phenyl group, a naphthyl group, or an anthryl group. In general formula (b1), Rb1 represents a cyclic hydrocarbon group. Yb1 represents a divalent linking group containing an ester bond. Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond. m is an integer of 1 or more, and Mm+ is an m-valent organic cation.

    Hydrophilic treatment method and surface treatment liquid

    公开(公告)号:US11041086B2

    公开(公告)日:2021-06-22

    申请号:US16503769

    申请日:2019-07-05

    IPC分类号: C09D133/14 B05D3/00 B05D1/00

    摘要: An object is to provide a hydrophilic treatment method which can firmly bond, while coating the surface of a treatment target with an extremely thin film, the coating to the surface of the treatment target and a surface treatment liquid which can be suitably used in the hydrophilic treatment method. In a hydrophilic treatment method using a surface treatment liquid containing a resin (A) and a solvent (S), the surface treatment liquid which includes, as the resin (A), a constituent unit (a1) derived from an N-substituted (meth) acrylamide having a hydrophilic group, which contains, in at least one of molecular chain terminals, a resin including a reactive silyl group and pH of the liquid is 4 or less is used, and thus a coating is formed on the surface of a treatment target.

    Method of diffusing impurity-diffusing component and method of manufacturing solar cell
    9.
    发明授权
    Method of diffusing impurity-diffusing component and method of manufacturing solar cell 有权
    扩散杂质扩散组分的方法和制造太阳能电池的方法

    公开(公告)号:US09190276B2

    公开(公告)日:2015-11-17

    申请号:US13951121

    申请日:2013-07-25

    摘要: A method of diffusing an impurity-diffusing component including forming a first diffusing agent layer containing a first conductivity type impurity-diffusing component on the surface of a semiconductor substrate; calcining the first diffusing agent layer; forming a second diffusing agent layer containing a second conductivity type impurity-diffusing component on the surface of the semiconductor substrate excluding the region where the first diffusing agent layer is formed; and heating the semiconductor substrate at a temperature higher than the calcination temperature to diffuse the first and second conductivity type impurity-diffusing components to the semiconductor substrate.

    摘要翻译: 一种扩散杂质扩散组分的方法,包括在半导体衬底的表面上形成含有第一导电型杂质扩散组分的第一扩散剂层; 煅烧第一扩散剂层; 在除了形成第一扩散剂层的区域之外,在半导体衬底的表面上形成含有第二导电型杂质扩散组分的第二扩散剂层; 以及在高于煅烧温度的温度下加热半导体衬底,以将第一和第二导电类型的杂质扩散组分扩散到半导体衬底。