公开(公告)号：US08679892B2

公开(公告)日：2014-03-25

申请号：US13343373

申请日：2012-01-04

申请人： Tomi T. Li ,  Jeng-Yang Chang ,  Sheng-Hui Chen ,  Cheng-Chung Lee

发明人： Tomi T. Li ,  Jeng-Yang Chang ,  Sheng-Hui Chen ,  Cheng-Chung Lee

IPC分类号： H01L21/00 ,  H01L31/0376 ,  H01L31/0384

CPC分类号： H01L31/0376 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03845 ,  H01L31/065 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer. Accordingly, the present invention can achieve broadband absorption in a single junction structure.

摘要翻译： 本发明涉及一种制造硅薄膜太阳能电池的方法，包括：提供基板; 在所述基板上形成第一电极; 通过化学气相沉积在所述第一电极上形成第一掺杂半导体层; 通过化学气相沉积在所述第一掺杂半导体层上形成本征层，其中所述本征层包括多个非晶/纳米晶硅层，并且所述本征层具有通过改变所述非晶/纳米晶硅层的平均晶粒尺寸而形成的各种能带隙 ; 通过化学气相沉积在本征层上形成第二掺杂半导体层，其中第一掺杂半导体层和第二掺杂半导体层中的一个是p型非晶硅层，另一个是n型非晶/纳米微晶 硅层; 以及在所述第二掺杂半导体层上形成第二电极。 因此，本发明可以实现单结结构中的宽带吸收。